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Title: Structural and thermoelectric properties of SiGe/Al multilayer systems during metal induced crystallization

Authors:
ORCiD logo [1];  [2]; ORCiD logo [3];  [4];  [5];  [1]
  1. Institute of Physics, University of Augsburg, Universitätsstraße 1, 86159 Augsburg, Germany
  2. Evatec AG, Hauptstraße 1a, 9477 Trübbach, Switzerland
  3. O-Flexx Technologies GmbH, Auf der Höhe 49, 47059 Duisburg, Germany
  4. Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
  5. IBM T. J. Watson Research Center, Yorktown Heights, 10598 New York, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1333974
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 120 Journal Issue: 20; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Lindorf, M., Rohrmann, H., Span, G., Raoux, S., Jordan-Sweet, J., and Albrecht, M. Structural and thermoelectric properties of SiGe/Al multilayer systems during metal induced crystallization. United States: N. p., 2016. Web. doi:10.1063/1.4968571.
Lindorf, M., Rohrmann, H., Span, G., Raoux, S., Jordan-Sweet, J., & Albrecht, M. Structural and thermoelectric properties of SiGe/Al multilayer systems during metal induced crystallization. United States. doi:10.1063/1.4968571.
Lindorf, M., Rohrmann, H., Span, G., Raoux, S., Jordan-Sweet, J., and Albrecht, M. Wed . "Structural and thermoelectric properties of SiGe/Al multilayer systems during metal induced crystallization". United States. doi:10.1063/1.4968571.
@article{osti_1333974,
title = {Structural and thermoelectric properties of SiGe/Al multilayer systems during metal induced crystallization},
author = {Lindorf, M. and Rohrmann, H. and Span, G. and Raoux, S. and Jordan-Sweet, J. and Albrecht, M.},
abstractNote = {},
doi = {10.1063/1.4968571},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 20,
volume = 120,
place = {United States},
year = {2016},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4968571

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Works referenced in this record:

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Enhancement of Thermoelectric Figure-of-Merit by a Bulk Nanostructuring Approach
journal, February 2010

  • Lan, Yucheng; Minnich, Austin Jerome; Chen, Gang
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