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Title: Factors influencing photoluminescence and photocarrier lifetime in CdSeTe/CdMgTe double heterostructures

Abstract

CdSeTe/CdMgTe double heterostructures were produced with both n-type and unintentionally doped absorber layers. Measurements of the dependence of photoluminescence intensity on excitation intensity were carried out, as well as measurements of time-resolved photoluminescence decay after an excitation pulse. It was found that decay times under very low photon injection conditions are dominated by a non-radiative Shockley-Read-Hall process described using a recombination center with an asymmetric capture cross section, where the cross section for holes is larger than that for electrons. As a result of the asymmetry, the center effectively extends photoluminescence decay by a hole trapping phenomenon. A reduction in electron capture cross section appeared at doping densities over 10 16cm -3. An analysis of the excitation intensity dependence of room temperature photoluminescence revealed a strong relationship with doping concentration. Here, this allows estimates of the carrier concentration to be made through a non-destructive optical method. Iodine was found to be an effective n-type dopant for CdTe, allowing controllable carrier concentrations without an increased rate of non-radiative recombination.

Authors:
 [1];  [2]; ORCiD logo [1]; ORCiD logo [1];  [1]; ORCiD logo [1];  [1];  [1]; ORCiD logo [1]; ORCiD logo [1];  [2]
  1. Texas State Univ., San Marcos, TX (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S); SunShot Foundational Program to Advance Cell Efficiency II (F-PACE II)
OSTI Identifier:
1333496
Alternate Identifier(s):
OSTI ID: 1420546
Report Number(s):
NREL/JA-5K00-67465
Journal ID: ISSN 0021-8979
Grant/Contract Number:  
AC36-08GO28308; DEAC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 120; Journal Issue: 16; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; photoluminescence; doping; electron capture; II-VI semiconductors; heterojunctions

Citation Formats

Swartz, Craig H., Zaunbrecher, K. N., Sohal, S., LeBlanc, E. G., Edirisooriya, M., Ogedengbe, O. S., Petersen, J. E., Jayathilaka, P. A. R. D., Myers, T. H., Holtz, M. W., and Barnes, Teresa M. Factors influencing photoluminescence and photocarrier lifetime in CdSeTe/CdMgTe double heterostructures. United States: N. p., 2016. Web. doi:10.1063/1.4966574.
Swartz, Craig H., Zaunbrecher, K. N., Sohal, S., LeBlanc, E. G., Edirisooriya, M., Ogedengbe, O. S., Petersen, J. E., Jayathilaka, P. A. R. D., Myers, T. H., Holtz, M. W., & Barnes, Teresa M. Factors influencing photoluminescence and photocarrier lifetime in CdSeTe/CdMgTe double heterostructures. United States. doi:10.1063/1.4966574.
Swartz, Craig H., Zaunbrecher, K. N., Sohal, S., LeBlanc, E. G., Edirisooriya, M., Ogedengbe, O. S., Petersen, J. E., Jayathilaka, P. A. R. D., Myers, T. H., Holtz, M. W., and Barnes, Teresa M. Fri . "Factors influencing photoluminescence and photocarrier lifetime in CdSeTe/CdMgTe double heterostructures". United States. doi:10.1063/1.4966574. https://www.osti.gov/servlets/purl/1333496.
@article{osti_1333496,
title = {Factors influencing photoluminescence and photocarrier lifetime in CdSeTe/CdMgTe double heterostructures},
author = {Swartz, Craig H. and Zaunbrecher, K. N. and Sohal, S. and LeBlanc, E. G. and Edirisooriya, M. and Ogedengbe, O. S. and Petersen, J. E. and Jayathilaka, P. A. R. D. and Myers, T. H. and Holtz, M. W. and Barnes, Teresa M.},
abstractNote = {CdSeTe/CdMgTe double heterostructures were produced with both n-type and unintentionally doped absorber layers. Measurements of the dependence of photoluminescence intensity on excitation intensity were carried out, as well as measurements of time-resolved photoluminescence decay after an excitation pulse. It was found that decay times under very low photon injection conditions are dominated by a non-radiative Shockley-Read-Hall process described using a recombination center with an asymmetric capture cross section, where the cross section for holes is larger than that for electrons. As a result of the asymmetry, the center effectively extends photoluminescence decay by a hole trapping phenomenon. A reduction in electron capture cross section appeared at doping densities over 1016cm-3. An analysis of the excitation intensity dependence of room temperature photoluminescence revealed a strong relationship with doping concentration. Here, this allows estimates of the carrier concentration to be made through a non-destructive optical method. Iodine was found to be an effective n-type dopant for CdTe, allowing controllable carrier concentrations without an increased rate of non-radiative recombination.},
doi = {10.1063/1.4966574},
journal = {Journal of Applied Physics},
number = 16,
volume = 120,
place = {United States},
year = {Fri Oct 28 00:00:00 EDT 2016},
month = {Fri Oct 28 00:00:00 EDT 2016}
}

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Works referenced in this record:

Time-resolved photoluminescence studies of CdTe solar cells
journal, September 2003

  • Metzger, W. K.; Albin, D.; Levi, D.
  • Journal of Applied Physics, Vol. 94, Issue 5, p. 3549-3555
  • DOI: 10.1063/1.1597974

Research strategies toward improving thin-film CdTe photovoltaic devices beyond 20% conversion efficiency
journal, December 2013