Inductively Coupled BCl3/Cl2/Ar Plasma Etching of High Al Content AlGaN.
Abstract
Abstract not provided.
- Authors:
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1332044
- Report Number(s):
- SAND2015-9066C
607927
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Conference
- Resource Relation:
- Conference: Proposed for presentation at the Electrochemical Society Meeting held October 11-16, 2015 in Phoenix, Az.
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Douglas, Erica Ann, Allerman, Andrew A., Baca, Albert G., Sanchez, Carlos Anthony, and Kaplar, Robert. Inductively Coupled BCl3/Cl2/Ar Plasma Etching of High Al Content AlGaN.. United States: N. p., 2015.
Web.
Douglas, Erica Ann, Allerman, Andrew A., Baca, Albert G., Sanchez, Carlos Anthony, & Kaplar, Robert. Inductively Coupled BCl3/Cl2/Ar Plasma Etching of High Al Content AlGaN.. United States.
Douglas, Erica Ann, Allerman, Andrew A., Baca, Albert G., Sanchez, Carlos Anthony, and Kaplar, Robert. Thu .
"Inductively Coupled BCl3/Cl2/Ar Plasma Etching of High Al Content AlGaN.". United States. https://www.osti.gov/servlets/purl/1332044.
@article{osti_1332044,
title = {Inductively Coupled BCl3/Cl2/Ar Plasma Etching of High Al Content AlGaN.},
author = {Douglas, Erica Ann and Allerman, Andrew A. and Baca, Albert G. and Sanchez, Carlos Anthony and Kaplar, Robert},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2015},
month = {10}
}
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