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Title: Inductively Coupled BCl3/Cl2/Ar Plasma Etching of High Al Content AlGaN.

Abstract

Abstract not provided.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1332044
Report Number(s):
SAND2015-9066C
607927
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the Electrochemical Society Meeting held October 11-16, 2015 in Phoenix, Az.
Country of Publication:
United States
Language:
English

Citation Formats

Douglas, Erica Ann, Allerman, Andrew A., Baca, Albert G., Sanchez, Carlos Anthony, and Kaplar, Robert. Inductively Coupled BCl3/Cl2/Ar Plasma Etching of High Al Content AlGaN.. United States: N. p., 2015. Web.
Douglas, Erica Ann, Allerman, Andrew A., Baca, Albert G., Sanchez, Carlos Anthony, & Kaplar, Robert. Inductively Coupled BCl3/Cl2/Ar Plasma Etching of High Al Content AlGaN.. United States.
Douglas, Erica Ann, Allerman, Andrew A., Baca, Albert G., Sanchez, Carlos Anthony, and Kaplar, Robert. Thu . "Inductively Coupled BCl3/Cl2/Ar Plasma Etching of High Al Content AlGaN.". United States. doi:. https://www.osti.gov/servlets/purl/1332044.
@article{osti_1332044,
title = {Inductively Coupled BCl3/Cl2/Ar Plasma Etching of High Al Content AlGaN.},
author = {Douglas, Erica Ann and Allerman, Andrew A. and Baca, Albert G. and Sanchez, Carlos Anthony and Kaplar, Robert},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Oct 01 00:00:00 EDT 2015},
month = {Thu Oct 01 00:00:00 EDT 2015}
}

Conference:
Other availability
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