Laser-assisted focused He+ ion beam induced etching with and without XeF2 gas assist

Stanford, Michael G.; Mahady, Kyle; Lewis, Brett B.; Fowlkes, Jason D.; Tan, Shida; Livengood, Richard; Magel, Gregory A.; Moore, Thomas M.; Rack, Philip D.

doi:10.1021/acsami.6b09758

Title: Laser-assisted focused He⁺ ion beam induced etching with and without XeF₂ gas assist

Journal Article · Tue Oct 04 00:00:00 EDT 2016 · ACS Applied Materials and Interfaces

DOI:https://doi.org/10.1021/acsami.6b09758· OSTI ID:1331091

Stanford, Michael G. ^[1]; Mahady, Kyle ^[1]; Lewis, Brett B. ^[1]; Fowlkes, Jason D. ^[2]; Tan, Shida ^[3]; Livengood, Richard ^[3]; Magel, Gregory A. ^[4]; Moore, Thomas M. ^[4]; Rack, Philip D. ^[2]

Univ. of Tennessee, Knoxville, TN (United States)
Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Intel Corp., Santa Clara, CA (United States)
Waviks Inc., Dallas, TX (United States)

Focused helium ion (He⁺) milling has been demonstrated as a high-resolution nanopatterning technique; however, it can be limited by its low sputter yield as well as the introduction of undesired subsurface damage. Here, we introduce pulsed laser- and gas-assisted processes to enhance the material removal rate and patterning fidelity. A pulsed laser-assisted He+ milling process is shown to enable high-resolution milling of titanium while reducing subsurface damage in situ. Gas-assisted focused ion beam induced etching (FIBIE) of Ti is also demonstrated in which the XeF₂ precursor provides a chemical assist for enhanced material removal rate. In conclusion, a pulsed laser-assisted and gas-assisted FIBIE process is shown to increase the etch yield by ~9× relative to the pure He+ sputtering process. These He⁺ induced nanopatterning techniques improve material removal rate, in comparison to standard He⁺ sputtering, while simultaneously decreasing subsurface damage, thus extending the applicability of the He⁺ probe as a nanopattering tool.

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1331091

Journal Information:: ACS Applied Materials and Interfaces, Vol. 8, Issue 42; ISSN 1944-8244

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 24 works

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Fabrication of planar nanomechanical photonic metamaterials Valente, João Journal of Optics, Vol. 20, Issue 9 https://doi.org/10.1088/2040-8986/aad8d6	journal	August 2018
Superplastic nanoscale pore shaping by ion irradiation Aramesh, Morteza; Mayamei, Yashar; Wolff, Annalena Nature Communications, Vol. 9, Issue 1 https://doi.org/10.1038/s41467-018-03316-7	journal	February 2018
Simulating advanced focused ion beam nanomachining: a quantitative comparison of simulation and experimental results Mahady, Kyle T.; Tan, Shida; Greenzweig, Yuval Nanotechnology, Vol. 29, Issue 49 https://doi.org/10.1088/1361-6528/aae183	journal	October 2018
Pulsed Laser-Assisted Helium Ion Nanomachining of Monolayer Graphene—Direct-Write Kirigami Patterns Zhang, Cheng; Dyck, Ondrej; Garfinkel, David A. Nanomaterials, Vol. 9, Issue 10 https://doi.org/10.3390/nano9101394	journal	September 2019
Superplastic nanoscale pore shaping by ion irradiation Aramesh, Morteza; Mayamei, Yashar; Wolff, Annalena Nature Publishing Group https://doi.org/10.5167/uzh-167290	text	January 2018
Superplastic nanoscale pore shaping by ion irradiation Aramesh, Morteza; Mayamei, Yashar; Wolff, Annalena ETH Zurich https://doi.org/10.3929/ethz-b-000249954	text	January 2018

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36 MATERIALS SCIENCE
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Title: Laser-assisted focused He+ ion beam induced etching with and without XeF2 gas assist

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References (32)

Cited By (7)

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Title: Laser-assisted focused He⁺ ion beam induced etching with and without XeF₂ gas assist