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Title: Semiconductor ferroelectric compositions and their use in photovoltaic devices

Abstract

Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprising a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
The Trustees Of The University Of Pennsylvania, Philadelphia, PA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1330710
Patent Number(s):
9,484,475
Application Number:
13/649,154
Assignee:
The Trustees Of The University Of Pennsylvania (Philadelphia, PA) CHO
DOE Contract Number:  
FG02-07ER46431
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 Oct 11
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY

Citation Formats

Rappe, Andrew M, Davies, Peter K, Spanier, Jonathan E, Grinberg, Ilya, and West, Don Vincent. Semiconductor ferroelectric compositions and their use in photovoltaic devices. United States: N. p., 2016. Web.
Rappe, Andrew M, Davies, Peter K, Spanier, Jonathan E, Grinberg, Ilya, & West, Don Vincent. Semiconductor ferroelectric compositions and their use in photovoltaic devices. United States.
Rappe, Andrew M, Davies, Peter K, Spanier, Jonathan E, Grinberg, Ilya, and West, Don Vincent. Tue . "Semiconductor ferroelectric compositions and their use in photovoltaic devices". United States. https://www.osti.gov/servlets/purl/1330710.
@article{osti_1330710,
title = {Semiconductor ferroelectric compositions and their use in photovoltaic devices},
author = {Rappe, Andrew M and Davies, Peter K and Spanier, Jonathan E and Grinberg, Ilya and West, Don Vincent},
abstractNote = {Disclosed herein are ferroelectric perovskites characterized as having a band gap, Egap, of less than 2.5 eV. Also disclosed are compounds comprising a solid solution of KNbO3 and BaNi1/2Nb1/2O3-delta, wherein delta is in the range of from 0 to about 1. The specification also discloses photovoltaic devices comprising one or more solar absorbing layers, wherein at least one of the solar absorbing layers comprises a semiconducting ferroelectric layer. Finally, this patent application provides solar cell, comprising: a heterojunction of n- and p-type semiconductors characterized as comprising an interface layer disposed between the n- and p-type semiconductors, the interface layer comprising a semiconducting ferroelectric absorber layer capable of enhancing light absorption and carrier separation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {11}
}

Patent:

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Works referenced in this record:

Perovskite oxides for visible-light-absorbing ferroelectric and photovoltaic materials
journal, November 2013

  • Grinberg, Ilya; West, D. Vincent; Torres, Maria
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First Principles Calculation of the Shift Current Photovoltaic Effect in Ferroelectrics
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