Methods for dry etching semiconductor devices
Patent
·
OSTI ID:1330708
The present invention provides methods for etching semiconductor devices, such aluminum nitride resonators. The methods herein allow for devices having improved etch profiles, such that nearly vertical sidewalls can be obtained. In some examples, the method employs a dry etch step with a primary etchant gas that omits BCl.sub.3, a common additive.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Number(s):
- 9,484,216
- Application Number:
- 14/728,810
- OSTI ID:
- 1330708
- Resource Relation:
- Patent File Date: 2015 Jun 02
- Country of Publication:
- United States
- Language:
- English
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