skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Methods for dry etching semiconductor devices

Patent ·
OSTI ID:1330708

The present invention provides methods for etching semiconductor devices, such aluminum nitride resonators. The methods herein allow for devices having improved etch profiles, such that nearly vertical sidewalls can be obtained. In some examples, the method employs a dry etch step with a primary etchant gas that omits BCl.sub.3, a common additive.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
9,484,216
Application Number:
14/728,810
OSTI ID:
1330708
Resource Relation:
Patent File Date: 2015 Jun 02
Country of Publication:
United States
Language:
English

References (37)

Device fabrication by plasma etching patent March 1981
Dry etching method for compound semiconductors patent April 1997
Method of dry plasma etching semiconductor materials patent July 2006
Method for etching smooth sidewalls in III-V based compounds for electro-optical devices patent March 2007
Contour mode resonators with acoustic reflectors patent June 2008
IC-compatible MEMS structure patent April 2009
Microelectromechanical resonator and method for fabrication patent January 2010
Method for fabricating a microelectromechanical resonator patent February 2013
Microelectromechanical filter formed from parallel-connected lattice networks of contour-mode resonators patent July 2013
Method to control BAW resonator top electrode edge during patterning patent September 2013
Ovenized microelectromechanical system (MEMS) resonator patent March 2014
MEMS in RF Filter Applications: Thin-film Bulk Acoustic Wave Technology journal February 2003
A new wafer-level packaging technology for MEMS with hermetic micro-environment conference May 2011
Single-crystal aluminum nitride nanomechanical resonators journal September 2001
Plasma Etching of Aluminum journal January 1987
Plasma etching: Yesterday, today, and tomorrow journal September 2013
Aluminum nitride piezo-acousto-photonic crystal nanocavity with high quality factors journal April 2013
Effect of additive noble gases in chlorine-based inductively coupled plasma etching of GaN, InN, and AlN
  • Hahn, Y. B.; Hays, D. C.; Donovan, S. M.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 17, Issue 3 https://doi.org/10.1116/1.581647
journal May 1999
Frequency Trimming of Aluminum Nitride Microresonators Using Rapid Thermal Annealing journal June 2014
Hermetic wafer-level packaging for RF MEMs: Effects on resonator performance conference May 2012
High-frequency lamb wave device composed of MEMS structure using LiNbO 3 thin film and air gap journal November 2010
AlN Microresonator-Based Filters With Multiple Bandwidths at Low Intermediate Frequencies journal August 2013
Capacitive frequency tuning of ALN micromechanical resonators conference June 2011
Ovenized and thermally tunable aluminum nitride microresonators conference October 2010
SAW/BAW acoustoelectronic technology for filters and communication systems conference April 2010
Sputtered thin film piezoelectric aluminum nitride as a functional MEMS material journal March 2012
On/Off micro-electromechanical switching of AlN piezoelectric resonators
  • Nordquist, Christopher D.; Olsson, Roy H.; Scott, Sean. M.
  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013, 2013 IEEE MTT-S International Microwave Symposium Digest (MTT) https://doi.org/10.1109/MWSYM.2013.6697719
conference June 2013
A high electromechanical coupling coefficient SH0 Lamb wave lithium niobate micromechanical resonator and a method for fabrication journal March 2014
Post-CMOS Compatible Aluminum Nitride MEMS Filters and Resonant Sensors
  • Olsson, Roy H.; Fleming, James G.; Wojciechowski, Kenneth E.
  • 2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum https://doi.org/10.1109/FREQ.2007.4319108
conference May 2007
Post-CMOS-Compatible Aluminum Nitride Resonant MEMS Accelerometers journal June 2009
High-Q aluminum nitride photonic crystal nanobeam cavities journal February 2012
Piezoelectric aluminum nitride thin films for microelectromechanical systems journal November 2012
Thin-film Lithium Niobate contour-mode resonators conference October 2012
Single-chip precision oscillators based on multi-frequency, high-Q aluminum nitride MEMS resonators conference June 2009
Super high frequency width extensional aluminum nitride (AlN) MEMS resonators conference September 2009
Low-Loss, Silicon Integrated, Aluminum Nitride Photonic Circuits and Their Use for Electro-Optic Signal Processing journal June 2012
Researching the Aluminum Nitride Etching Process for Application in MEMS Resonators journal February 2015

Similar Records

Dry etching method for compound semiconductors
Patent · Tue Apr 29 00:00:00 EDT 1997 · OSTI ID:1330708

Dry etching method for compound semiconductors
Patent · Wed Jan 01 00:00:00 EST 1997 · OSTI ID:1330708

Microfabrication of membrane-based devices by HARSE and combined HARSE/wet etching
Conference · Sat Aug 01 00:00:00 EDT 1998 · OSTI ID:1330708

Related Subjects