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Title: Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe

Abstract

CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na) elements can increase hole density above 10 16 cm -3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P) in a Cd-rich ambient, lifetimes of 30 ns with 10 16 cm -3 hole density are achieved in single-crystal and polycrystalline CdTe without CdCl 2 or Cu. Furthermore, phosphorus doping appears to be thermally stable. In conclusion, this combination of long lifetime, high carrier concentration, and improved stability can help overcome historic barriers for CdTe solar cell development.

Authors:
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Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1330596
Alternate Identifier(s):
OSTI ID: 1332487; OSTI ID: 1421266
Report Number(s):
NREL/JA-5K00-66107
Journal ID: ISSN 2166-532X
Grant/Contract Number:  
AC36-08-GO28308; AC36-08GO28308
Resource Type:
Journal Article: Published Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Name: APL Materials Journal Volume: 4 Journal Issue: 11; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; hole density; doping; II-VI semiconductors; photoluminescence; sodium

Citation Formats

Burst, James M., Farrell, Stuart B., Albin, David S., Colegrove, Eric, Reese, Matthew O., Duenow, Joel N., Kuciauskas, Darius, and Metzger, Wyatt K. Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe. United States: N. p., 2016. Web. doi:10.1063/1.4966209.
Burst, James M., Farrell, Stuart B., Albin, David S., Colegrove, Eric, Reese, Matthew O., Duenow, Joel N., Kuciauskas, Darius, & Metzger, Wyatt K. Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe. United States. https://doi.org/10.1063/1.4966209
Burst, James M., Farrell, Stuart B., Albin, David S., Colegrove, Eric, Reese, Matthew O., Duenow, Joel N., Kuciauskas, Darius, and Metzger, Wyatt K. Tue . "Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe". United States. https://doi.org/10.1063/1.4966209.
@article{osti_1330596,
title = {Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe},
author = {Burst, James M. and Farrell, Stuart B. and Albin, David S. and Colegrove, Eric and Reese, Matthew O. and Duenow, Joel N. and Kuciauskas, Darius and Metzger, Wyatt K.},
abstractNote = {CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na) elements can increase hole density above 1016 cm-3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P) in a Cd-rich ambient, lifetimes of 30 ns with 1016 cm-3 hole density are achieved in single-crystal and polycrystalline CdTe without CdCl2 or Cu. Furthermore, phosphorus doping appears to be thermally stable. In conclusion, this combination of long lifetime, high carrier concentration, and improved stability can help overcome historic barriers for CdTe solar cell development.},
doi = {10.1063/1.4966209},
url = {https://www.osti.gov/biblio/1330596}, journal = {APL Materials},
issn = {2166-532X},
number = 11,
volume = 4,
place = {United States},
year = {2016},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at https://doi.org/10.1063/1.4966209

Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

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Acceptor states in CdTe and comparison with ZnTe. General trends
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    Works referencing / citing this record:

    Exceeding 20% efficiency with in situ group V doping in polycrystalline CdTe solar cells
    journal, August 2019


    Excitation-dependent carrier lifetime and diffusion length in bulk CdTe determined by time-resolved optical pump-probe techniques
    journal, January 2018


    Back-surface recombination, electron reflectors, and paths to 28% efficiency for thin-film photovoltaics: A CdTe case study
    journal, February 2019


    Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping
    journal, September 2018


    Experimental and theoretical comparison of Sb, As, and P diffusion mechanisms and doping in CdTe
    journal, January 2018


    Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior
    journal, December 2017