Improved photoswitching response times of MoS2 field-effect transistors by stacking p-type copper phthalocyanine layer
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, South Korea
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- AC02-05CH11231
- OSTI ID:
- 1330591
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 109 Journal Issue: 18; ISSN 0003-6951
- Publisher:
- American Institute of PhysicsCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 23 works
Citation information provided by
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