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Title: Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof

Abstract

The present invention includes a high-speed, high-saturation power detector (e.g., a photodiode) compatible with a relatively simple monolithic integration process. In particular embodiments, the photodiode includes an intrinsic bulk absorption region, which is grown above a main waveguide core including a number of quantum wells (QWs) that are used as the active region of a phase modulator. The invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithic, simplified process.

Inventors:
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1330348
Patent Number(s):
9,477,040
Application Number:
14/801,257
Assignee:
Sandia Corporation (Albuquerque, NM) SNL-A
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Jul 16
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Skogen, Erik J. Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof. United States: N. p., 2016. Web.
Skogen, Erik J. Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof. United States.
Skogen, Erik J. Tue . "Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof". United States. doi:. https://www.osti.gov/servlets/purl/1330348.
@article{osti_1330348,
title = {Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof},
author = {Skogen, Erik J.},
abstractNote = {The present invention includes a high-speed, high-saturation power detector (e.g., a photodiode) compatible with a relatively simple monolithic integration process. In particular embodiments, the photodiode includes an intrinsic bulk absorption region, which is grown above a main waveguide core including a number of quantum wells (QWs) that are used as the active region of a phase modulator. The invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithic, simplified process.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Oct 25 00:00:00 EDT 2016},
month = {Tue Oct 25 00:00:00 EDT 2016}
}

Patent:

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Works referenced in this record:

Electroabsorption modulator performance predicted from band-edge absorption spectra of bulk, quantum-well, and quantum-well-intermixed InGaAsP structures
journal, January 2007

  • Morrison, Gordon B.; Raring, James W.; Wang, Chad S.
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A study of regrowth interface and material quality for a novel InP-based architecture
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A quantum-well-intermixing process for wavelength-agile photonic integrated circuits
journal, July 2002

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  • DOI: 10.1109/JSTQE.2002.800849

High contrast InP/InGaAsP grating MOCVD regrowth using TBA and TBP
journal, December 2004

  • Skogen, Erik J.; Barton, Jonathon S.; Raring, James W.
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  • DOI: 10.1016/j.jcrysgro.2004.09.008

Monolithically integrated active components: a quantum-well intermixing approach
journal, March 2005

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  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 11, Issue 2, p. 343-355
  • DOI: 10.1109/JSTQE.2005.846525

Optical AND and NOT gates at 40 Gbps using electro-absorption modulator/photodiode Pairs
conference, November 2010