skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof

Abstract

The present invention includes a high-speed, high-saturation power detector (e.g., a photodiode) compatible with a relatively simple monolithic integration process. In particular embodiments, the photodiode includes an intrinsic bulk absorption region, which is grown above a main waveguide core including a number of quantum wells (QWs) that are used as the active region of a phase modulator. The invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithic, simplified process.

Inventors:
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1330348
Patent Number(s):
9,477,040
Application Number:
14/801,257
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Jul 16
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Skogen, Erik J. Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof. United States: N. p., 2016. Web.
Skogen, Erik J. Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof. United States.
Skogen, Erik J. 2016. "Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof". United States. https://www.osti.gov/servlets/purl/1330348.
@article{osti_1330348,
title = {Guided-wave photodiode using through-absorber quantum-well-intermixing and methods thereof},
author = {Skogen, Erik J.},
abstractNote = {The present invention includes a high-speed, high-saturation power detector (e.g., a photodiode) compatible with a relatively simple monolithic integration process. In particular embodiments, the photodiode includes an intrinsic bulk absorption region, which is grown above a main waveguide core including a number of quantum wells (QWs) that are used as the active region of a phase modulator. The invention also includes methods of fabricating integrated photodiode and waveguide assemblies using a monolithic, simplified process.},
doi = {},
url = {https://www.osti.gov/biblio/1330348}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {10}
}

Works referenced in this record:

A widely tunable high-speed transmitter using an integrated SGDBR laser-semiconductor optical amplifier and mach-zehnder modulator
journal, September 2003


Efficient vertical coupling of photodiodes to InGaAsP rib waveguides
journal, June 1991


Hybrid Silicon Photonics for Optical Interconnects
journal, March 2011


Quantum-well-intermixed monolithically integrated widely tunable all-optical wavelength converter operating at 10 Gb/s
journal, August 2005


High-Saturation-Current Charge-Compensated InGaAs–InP Uni-Traveling-Carrier Photodiode
journal, March 2004


Enhanced photoluminescence emission from bandgap shifted InGaAs/InGaAsP/InP microstructures processed with UV laser quantum well intermixing
journal, October 2013


Quantum well intermixing
journal, June 1993


Cross-phase modulation efficiency in offset quantum-well and centered quantum-well semiconductor optical amplifiers
journal, November 2005


Electroabsorption modulator performance predicted from band-edge absorption spectra of bulk, quantum-well, and quantum-well-intermixed InGaAsP structures
journal, January 2007


Photocurrent spectroscopy analysis of widely tunable negative-chirp quantum-well intermixed laser-modulator transmitters
journal, January 2005


Photocurrent spectroscopy for quantum-well intermixed photonic integrated circuit design
journal, July 2005


A study of regrowth interface and material quality for a novel InP-based architecture
journal, December 2004


Demonstration of high saturation power∕high gain SOAs using quantum well intermixing based integration platform
journal, January 2005


Demonstration of Widely Tunable Single-Chip 10-Gb/s Laser–Modulators Using Multiple-Bandgap InGaAsP Quantum-Well Intermixing
journal, July 2004


Design and Demonstration of Novel QW Intermixing Scheme for the Integration of UTC-Type Photodiodes With QW-Based Components
journal, February 2006


A quantum-well-intermixing process for wavelength-agile photonic integrated circuits
journal, July 2002


High contrast InP/InGaAsP grating MOCVD regrowth using TBA and TBP
journal, December 2004


Integrated Guided-Wave Photodiode Using Through-Absorber Quantum-Well-Intermixing
journal, September 2013


Monolithically integrated active components: a quantum-well intermixing approach
journal, March 2005


Multiple-band-edge quantum-well intermixing in the InGaAs∕InGaAsP∕InGaP material system
journal, June 2005


Optical AND and NOT gates at 40 Gbps using electro-absorption modulator/photodiode Pairs
conference, November 2010


Postgrowth control of the quantum-well band edge for the monolithic integration of widely tunable lasers and electroabsorption modulators
journal, September 2003


Tunable buried ridge stripe sampled grating distributed Bragg reflector lasers utilizing quantum well intermixing
conference, January 2001


Tunable sampled-grating DBR lasers using quantum-well intermixing
journal, September 2002


Quantum well intermixed waveguide grating
journal, July 2011


Integration of hybrid silicon lasers and electroabsorption modulators
journal, January 2008


Mutual Injection Locking of Monolithically Integrated Coupled-Cavity DBR Lasers
journal, July 2011


Fabrication and molecular beam epitaxy regrowth of first-order, high contrast AlGaAs∕GaAs gratings
journal, January 2006

  • Wang, C. S.; Morrison, G. B.; Skogen, E. J.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 24, Issue 3
  • https://doi.org/10.1116/1.2190679

Towards Monolithic Integration of Nonlinear Optical Frequency Conversion
journal, September 2010