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Title: Eu 3+-doped wide band gap Zn 2SnO 4 semiconductor nanoparticles: Structure and luminescence

Abstract

Nanocrystalline Zn 2SnO 4 powders doped with Eu 3+ ions were synthesized via a mechanochemical solid-state reaction method followed by postannealing in air at 1200 °C. X-ray diffraction (XRD), energy-dispersive X-ray (EDX), and Raman and photoluminescence (PL) spectroscopies provide convincing evidence for the incorporation of Eu 3+ ions into the host matrix on noncentrosymmetric sites of the cubic inverse spinel lattice. Microstructural analysis shows that the crystalline grain size decreases with the addition of Eu 3+. Formation of a nanocrystalline Eu 2Sn 2O 7 secondary phase is also observed. Luminescence spectra of Eu 3+-doped samples show several emissions, including narrow-band magnetic dipole emission at 595 nm and electric dipole emission at 615 nm of the Eu 3+ ions. Excitation spectra and lifetime measurements suggest that Eu 3+ ions are incorporated at only one symmetry site. According to the crystal field theory, it is assumed that Eu 3+ ions participate at octahedral sites of Zn 2+ or Sn 4+ under a weak crystal field, rather than at the tetrahedral sites of Zn2+, because of the high octahedral stabilization energy for Eu 3+. Activation of symmetry forbidden (IR-active and silent) modes is observed in the Raman scattering spectra of both pure andmore » doped samples, indicating a disorder of the cation sublattice of Zn 2SnO 4 nanocrystallites. These results were further supported by the first principle lattice dynamics calculations. The spinel-type Zn 2SnO 4 shows effectiveness in hosting Eu 3+ ions, which could be used as a prospective green/red emitter. As a result, this work also illustrates how sustainable and simple preparation methods could be used for effective engineering of material properties.« less

Authors:
 [1];  [2];  [3];  [4];  [2];  [2];  [4];  [2]
  1. National Institute of Standards and Technology, Gaithersburg, MD (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States); Catalonia Institute for Energy Research (IREC), Barcelona (Spain)
  2. Univ. of Novi Sad, Novi Sad (Serbia)
  3. Univ. of Houston, Houston, TX (United States)
  4. Catalonia Institute for Energy Research (IREC), Barcelona (Spain)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Fuel Cell Technologies Office (EE-3F)
OSTI Identifier:
1330001
Report Number(s):
NREL/JA-5900-67318
Journal ID: ISSN 1932-7447
Grant/Contract Number:
AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Physical Chemistry. C
Additional Journal Information:
Journal Volume: 120; Journal Issue: 33; Journal ID: ISSN 1932-7447
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; nanoparticles; doping; analysis

Citation Formats

Dimitrievska, Mirjana, Ivetić, Tamara B., Litvinchuk, Alexander P., Fairbrother, Andrew, Miljević, Bojan B., Štrbac, Goran R., Rodríguez, Alejandro Perez, and Lukić-Petrović, Svetlana R.. Eu3+-doped wide band gap Zn2SnO4 semiconductor nanoparticles: Structure and luminescence. United States: N. p., 2016. Web. doi:10.1021/acs.jpcc.6b05335.
Dimitrievska, Mirjana, Ivetić, Tamara B., Litvinchuk, Alexander P., Fairbrother, Andrew, Miljević, Bojan B., Štrbac, Goran R., Rodríguez, Alejandro Perez, & Lukić-Petrović, Svetlana R.. Eu3+-doped wide band gap Zn2SnO4 semiconductor nanoparticles: Structure and luminescence. United States. doi:10.1021/acs.jpcc.6b05335.
Dimitrievska, Mirjana, Ivetić, Tamara B., Litvinchuk, Alexander P., Fairbrother, Andrew, Miljević, Bojan B., Štrbac, Goran R., Rodríguez, Alejandro Perez, and Lukić-Petrović, Svetlana R.. Wed . "Eu3+-doped wide band gap Zn2SnO4 semiconductor nanoparticles: Structure and luminescence". United States. doi:10.1021/acs.jpcc.6b05335. https://www.osti.gov/servlets/purl/1330001.
@article{osti_1330001,
title = {Eu3+-doped wide band gap Zn2SnO4 semiconductor nanoparticles: Structure and luminescence},
author = {Dimitrievska, Mirjana and Ivetić, Tamara B. and Litvinchuk, Alexander P. and Fairbrother, Andrew and Miljević, Bojan B. and Štrbac, Goran R. and Rodríguez, Alejandro Perez and Lukić-Petrović, Svetlana R.},
abstractNote = {Nanocrystalline Zn2SnO4 powders doped with Eu3+ ions were synthesized via a mechanochemical solid-state reaction method followed by postannealing in air at 1200 °C. X-ray diffraction (XRD), energy-dispersive X-ray (EDX), and Raman and photoluminescence (PL) spectroscopies provide convincing evidence for the incorporation of Eu3+ ions into the host matrix on noncentrosymmetric sites of the cubic inverse spinel lattice. Microstructural analysis shows that the crystalline grain size decreases with the addition of Eu3+. Formation of a nanocrystalline Eu2Sn2O7 secondary phase is also observed. Luminescence spectra of Eu3+-doped samples show several emissions, including narrow-band magnetic dipole emission at 595 nm and electric dipole emission at 615 nm of the Eu3+ ions. Excitation spectra and lifetime measurements suggest that Eu3+ ions are incorporated at only one symmetry site. According to the crystal field theory, it is assumed that Eu3+ ions participate at octahedral sites of Zn2+ or Sn4+ under a weak crystal field, rather than at the tetrahedral sites of Zn2+, because of the high octahedral stabilization energy for Eu3+. Activation of symmetry forbidden (IR-active and silent) modes is observed in the Raman scattering spectra of both pure and doped samples, indicating a disorder of the cation sublattice of Zn2SnO4 nanocrystallites. These results were further supported by the first principle lattice dynamics calculations. The spinel-type Zn2SnO4 shows effectiveness in hosting Eu3+ ions, which could be used as a prospective green/red emitter. As a result, this work also illustrates how sustainable and simple preparation methods could be used for effective engineering of material properties.},
doi = {10.1021/acs.jpcc.6b05335},
journal = {Journal of Physical Chemistry. C},
number = 33,
volume = 120,
place = {United States},
year = {Wed Aug 03 00:00:00 EDT 2016},
month = {Wed Aug 03 00:00:00 EDT 2016}
}

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