Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes
Abstract
Bulk GaAs samples with different surface cleave planes were implanted with 100 and 10 000 V hydrogen ions inside an ultrahigh vacuum test apparatus to simulate ion back-bombardment of the photocathode inside a DC high voltage photogun. The photocathode yield, or quantum efficiency, could easily be recovered following implantation with 100 V hydrogen ions but not for 10 000 V ions. Moreover, the implantation damage with 10 000 V hydrogen ions was more pronounced for GaAs photocathode samples with (100) and (111A) cleave planes, compared to the photocathode with (110) cleave plane. Lastly, this result is consistent with enhanced ion channeling for the (110) cleave plane compared to the other cleave planes, with ions penetrating deeper into the photocathode material beyond the absorption depth of the laser light and beyond the region of the photocathode where the photoemitted electrons originate.
- Authors:
- Publication Date:
- Research Org.:
- Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Nuclear Physics (NP)
- OSTI Identifier:
- 1329952
- Alternate Identifier(s):
- OSTI ID: 1330460
- Report Number(s):
- JLAB-ACC-16-2304; DOE/OR/23177-3885
Journal ID: ISSN 2469-9888; PRABFM; 103402
- Grant/Contract Number:
- AC05-06OR23177
- Resource Type:
- Journal Article: Published Article
- Journal Name:
- Physical Review Accelerators and Beams
- Additional Journal Information:
- Journal Name: Physical Review Accelerators and Beams Journal Volume: 19 Journal Issue: 10; Journal ID: ISSN 2469-9888
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 43 PARTICLE ACCELERATORS
Citation Formats
Liu, Wei, Zhang, Shukui, Stutzman, Marcy, and Poelker, Matt. Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes. United States: N. p., 2016.
Web. doi:10.1103/PhysRevAccelBeams.19.103402.
Liu, Wei, Zhang, Shukui, Stutzman, Marcy, & Poelker, Matt. Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes. United States. https://doi.org/10.1103/PhysRevAccelBeams.19.103402
Liu, Wei, Zhang, Shukui, Stutzman, Marcy, and Poelker, Matt. Mon .
"Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes". United States. https://doi.org/10.1103/PhysRevAccelBeams.19.103402.
@article{osti_1329952,
title = {Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes},
author = {Liu, Wei and Zhang, Shukui and Stutzman, Marcy and Poelker, Matt},
abstractNote = {Bulk GaAs samples with different surface cleave planes were implanted with 100 and 10 000 V hydrogen ions inside an ultrahigh vacuum test apparatus to simulate ion back-bombardment of the photocathode inside a DC high voltage photogun. The photocathode yield, or quantum efficiency, could easily be recovered following implantation with 100 V hydrogen ions but not for 10 000 V ions. Moreover, the implantation damage with 10 000 V hydrogen ions was more pronounced for GaAs photocathode samples with (100) and (111A) cleave planes, compared to the photocathode with (110) cleave plane. Lastly, this result is consistent with enhanced ion channeling for the (110) cleave plane compared to the other cleave planes, with ions penetrating deeper into the photocathode material beyond the absorption depth of the laser light and beyond the region of the photocathode where the photoemitted electrons originate.},
doi = {10.1103/PhysRevAccelBeams.19.103402},
url = {https://www.osti.gov/biblio/1329952},
journal = {Physical Review Accelerators and Beams},
issn = {2469-9888},
number = 10,
volume = 19,
place = {United States},
year = {2016},
month = {10}
}
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