skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes

Abstract

Bulk GaAs samples with different surface cleave planes were implanted with 100 and 10 000 V hydrogen ions inside an ultrahigh vacuum test apparatus to simulate ion back-bombardment of the photocathode inside a DC high voltage photogun. The photocathode yield, or quantum efficiency, could easily be recovered following implantation with 100 V hydrogen ions but not for 10 000 V ions. Moreover, the implantation damage with 10 000 V hydrogen ions was more pronounced for GaAs photocathode samples with (100) and (111A) cleave planes, compared to the photocathode with (110) cleave plane. Lastly, this result is consistent with enhanced ion channeling for the (110) cleave plane compared to the other cleave planes, with ions penetrating deeper into the photocathode material beyond the absorption depth of the laser light and beyond the region of the photocathode where the photoemitted electrons originate.

Authors:
; ; ;
Publication Date:
Research Org.:
Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Nuclear Physics (NP)
OSTI Identifier:
1329952
Alternate Identifier(s):
OSTI ID: 1330460
Report Number(s):
JLAB-ACC-16-2304; DOE/OR/23177-3885
Journal ID: ISSN 2469-9888; PRABFM; 103402
Grant/Contract Number:  
AC05-06OR23177
Resource Type:
Journal Article: Published Article
Journal Name:
Physical Review Accelerators and Beams
Additional Journal Information:
Journal Name: Physical Review Accelerators and Beams Journal Volume: 19 Journal Issue: 10; Journal ID: ISSN 2469-9888
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English
Subject:
43 PARTICLE ACCELERATORS

Citation Formats

Liu, Wei, Zhang, Shukui, Stutzman, Marcy, and Poelker, Matt. Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes. United States: N. p., 2016. Web. doi:10.1103/PhysRevAccelBeams.19.103402.
Liu, Wei, Zhang, Shukui, Stutzman, Marcy, & Poelker, Matt. Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes. United States. https://doi.org/10.1103/PhysRevAccelBeams.19.103402
Liu, Wei, Zhang, Shukui, Stutzman, Marcy, and Poelker, Matt. Mon . "Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes". United States. https://doi.org/10.1103/PhysRevAccelBeams.19.103402.
@article{osti_1329952,
title = {Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes},
author = {Liu, Wei and Zhang, Shukui and Stutzman, Marcy and Poelker, Matt},
abstractNote = {Bulk GaAs samples with different surface cleave planes were implanted with 100 and 10 000 V hydrogen ions inside an ultrahigh vacuum test apparatus to simulate ion back-bombardment of the photocathode inside a DC high voltage photogun. The photocathode yield, or quantum efficiency, could easily be recovered following implantation with 100 V hydrogen ions but not for 10 000 V ions. Moreover, the implantation damage with 10 000 V hydrogen ions was more pronounced for GaAs photocathode samples with (100) and (111A) cleave planes, compared to the photocathode with (110) cleave plane. Lastly, this result is consistent with enhanced ion channeling for the (110) cleave plane compared to the other cleave planes, with ions penetrating deeper into the photocathode material beyond the absorption depth of the laser light and beyond the region of the photocathode where the photoemitted electrons originate.},
doi = {10.1103/PhysRevAccelBeams.19.103402},
url = {https://www.osti.gov/biblio/1329952}, journal = {Physical Review Accelerators and Beams},
issn = {2469-9888},
number = 10,
volume = 19,
place = {United States},
year = {2016},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at https://doi.org/10.1103/PhysRevAccelBeams.19.103402

Save / Share:

Works referenced in this record:

Coherence of a spin-polarized electron beam emitted from a semiconductor photocathode in a transmission electron microscope
journal, November 2014


A 500 kV photoemission electron gun for the CEBAF FEL
journal, July 1992


Load-locked dc high voltage GaAs photogun with an inverted-geometry ceramic insulator
journal, January 2010


Record high-average current from a high-brightness photoinjector
journal, January 2013


Charge and fluence lifetime measurements of a dc high voltage GaAs photogun at high average current
journal, April 2011


GaAs photocathode cleaning by atomic hydrogen from a plasma source
journal, January 1999


Effects of atomic hydrogen and deuterium exposure on high polarization GaAs photocathodes
journal, December 2005


The Channeling of Energetic Atoms in Crystal Lattices
journal, January 1963


Molecular dynamics simulation of ion ranges in the 1–100 keV energy range
journal, March 1995


GaAs-Cs: A new type of photoemitter
journal, August 1965


Photoemission from GaAs-Cs-O
journal, February 1968


Dependence on Crystalline Face of the Band Bending in Cs 2 O‐Activated GaAs
journal, November 1971


Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV
journal, August 1962


Diffusion Lengths of Electrons and Holes in GaAs
journal, February 1967


Quantum Efficiency and Radiative Lifetime in p ‐Type Gallium Arsenide
journal, September 1965


Coaxial Resonators with Helical Inner Conductor
journal, December 1959


A photoemission model for low work function coated metal surfaces and its experimental validation
journal, June 2006


Development of a high average current polarized electron source with long cathode operational lifetime
journal, February 2007


    Works referencing / citing this record:

    Mie-type GaAs nanopillar array resonators for negative electron affinity photocathodes
    journal, January 2020


    Topological insulators for the generation of electron beams
    journal, December 2018


    Increasing charge lifetime in dc polarized electron guns by offsetting the anode
    journal, August 2019


    Optical-Resonance-Enhanced Photoemission from Nanostructured Ga As Photocathodes
    journal, December 2019


    Evaluation of GaAsSb/AlGaAs strained superlattice photocathodes
    journal, July 2018