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Title: Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition

Abstract

Epitaxial layered ternary metal-nitride FeMoN 2, (Fe 0.33 Mo 0.67)MoN 2, CoMoN 2, and FeWN 2 thin films have been grown on c-plane sapphire substrates by polymer-assisted deposition. The ABN 2 layer sits on top of the oxygen sublattices of the substrate with three possible matching configurations due to the significantly reduced lattice mismatch. The doping composition and elements affect not only the out-of-plane lattice parameters but also the temperature-dependent electrical properties. These films have resistivity in the range of 0.1–1 mΩ·cm, showing tunable metallic or semiconducting behaviors by adjusting the composition. A modified parallel connection channel model has been used to analyze the grain boundary and Coulomb blockade effect on the electrical properties. Furthermore, the growth of the high crystallinity layered epitaxial thin films provides an avenue to study the composition-structure-property relationship in ABN 2 materials through A and B-site substitution.

Authors:
ORCiD logo [1];  [2]; ORCiD logo [1];  [1];  [1];  [1];  [3];  [1];  [1];  [4];  [3];  [1]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  2. Tsinghua Univ., Beijing (China)
  3. Univ. of Texas at San Antonio, San Antonio, TX (United States)
  4. Texas A & M Univ., College Station, TX (United States)
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Laboratory Directed Research and Development (LDRD) Program
OSTI Identifier:
1329907
Report Number(s):
LA-UR-16-24476
Journal ID: ISSN 0003-6951; APPLAB
Grant/Contract Number:
AC52-06NA25396
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 8; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; inorganic and physical chemistry; material science; thin film structure; molybdenum; epitaxy; electrical resistivity; materials properties

Citation Formats

Enriquez, Erik M., Zhang, Yingying, Chen, Aiping, Bi, Zhenxing, Wang, Yongqiang, Fu, Engang, Harrell, Zachary John, Lu, Xujie, Dowden, Paul Charles, Wang, Haiyan, Chen, Chonglin, and Jia, Quanxi. Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition. United States: N. p., 2016. Web. doi:10.1063/1.4961880.
Enriquez, Erik M., Zhang, Yingying, Chen, Aiping, Bi, Zhenxing, Wang, Yongqiang, Fu, Engang, Harrell, Zachary John, Lu, Xujie, Dowden, Paul Charles, Wang, Haiyan, Chen, Chonglin, & Jia, Quanxi. Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition. United States. doi:10.1063/1.4961880.
Enriquez, Erik M., Zhang, Yingying, Chen, Aiping, Bi, Zhenxing, Wang, Yongqiang, Fu, Engang, Harrell, Zachary John, Lu, Xujie, Dowden, Paul Charles, Wang, Haiyan, Chen, Chonglin, and Jia, Quanxi. 2016. "Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition". United States. doi:10.1063/1.4961880. https://www.osti.gov/servlets/purl/1329907.
@article{osti_1329907,
title = {Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition},
author = {Enriquez, Erik M. and Zhang, Yingying and Chen, Aiping and Bi, Zhenxing and Wang, Yongqiang and Fu, Engang and Harrell, Zachary John and Lu, Xujie and Dowden, Paul Charles and Wang, Haiyan and Chen, Chonglin and Jia, Quanxi},
abstractNote = {Epitaxial layered ternary metal-nitride FeMoN2, (Fe0.33 Mo0.67)MoN2, CoMoN2, and FeWN2 thin films have been grown on c-plane sapphire substrates by polymer-assisted deposition. The ABN2 layer sits on top of the oxygen sublattices of the substrate with three possible matching configurations due to the significantly reduced lattice mismatch. The doping composition and elements affect not only the out-of-plane lattice parameters but also the temperature-dependent electrical properties. These films have resistivity in the range of 0.1–1 mΩ·cm, showing tunable metallic or semiconducting behaviors by adjusting the composition. A modified parallel connection channel model has been used to analyze the grain boundary and Coulomb blockade effect on the electrical properties. Furthermore, the growth of the high crystallinity layered epitaxial thin films provides an avenue to study the composition-structure-property relationship in ABN2 materials through A and B-site substitution.},
doi = {10.1063/1.4961880},
journal = {Applied Physics Letters},
number = 8,
volume = 109,
place = {United States},
year = 2016,
month = 8
}

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  • Cited by 1
  • We report the growth of continuous diamond thin films by bias-assisted hot filament chemical vapor deposition onto hexagonal boron nitride films prepared by plasma chemical vapor deposition on silicon substrates. Negative substrate biasing during the early stages of diamond growth greatly increased the nucleation density. Values of 10{sup 10}cm{sup {minus}2} were achieved at {minus}250 V for bias times as short as 25 min. After the nucleation stage, high quality polycrystalline continuous diamond films, as revealed by scanning electron microscopy and Raman analysis, were grown under standard hot filament deposition conditions. {copyright} {ital 1997 American Institute of Physics.}
  • The epitaxial NdNi{sub 1-x}Co{sub x}O{sub 3} (0 ≤ x ≤ 0.10) thin films on (001) LaAlO{sub 3} and (001) SrTiO{sub 3} substrates were grown by a simple polymer-assisted deposition technique. The co-function of the epitaxial strain and Co doping on the metal-insulator transition in perovskite nickelate NdNiO{sub 3} thin films is investigated. X-ray diffraction and scanning electron microscopy reveal that the as-prepared thin films exhibit good crystallinity and heteroepitaxy. The temperature dependent resistivities of the thin films indicate that both the epitaxial strain and Co doping lower the metal-insulator (MI) transition temperature, which can be treated as a way to tune the MI transition.more » Furthermore, under the investigated Co-doping levels, the MI transition temperature (T{sub MI}) shifts to low temperatures with Co content increasing under both compressive and tensile strain, and the more distinction is in the former situation. When x is increased up to 0.10, the insulating phase is completely suppressed under the compressive strain. With the strain increases from compression to tension, the resistivities are enhanced both in the metal and insulating regions. However, the Co-doping effect on the resistivity shows a more complex situation. As Co content x increases from zero to 0.10, the resistivities are reduced both in the metal and insulating regions under the tensile strain, whereas they are enhanced in the high-temperature metal region under the compressive strain. Based on the temperature dependent resistivity in the metal regions, it is suggested that the electron-phonon coupling in the films becomes weaker with the increase of both the strain and Co-doping.« less
  • No abstract prepared.
  • This study investigates the mechanical and physical properties of low-temperature plasma-enhanced chemical-vapor-deposited silicon nitride thin films, with particular respect to the effect of deposition temperature. The mechanical properties of the films were evaluated by both nanoindentation and microcantilever beam-bending techniques. The cantilever beam specimens were fabricated from silicon nitride thin films deposited on (100) silicon wafer by bulk micromachining. The density of the films was determined from quartz crystal microbalance measurements, as well as from the resonant modes of the cantilever beams, which were mechanically excited using an atomic force microscope. It was found that both the Young's modulus andmore » density of the films were significantly reduced with decreasing deposition temperature. The decrease in Young's modulus is attributed to the decreasing material density. The decrease in density with decreasing deposition temperature is believed to be due to the slower diffusion rates of the deposited species, which retarded the densification of the film during the deposition process.« less