Ferroelectric Self-Poling, Switching, and Monoclinic Domain Configuration in BiFeO 3 Thin Films

Beekman, C.; Siemons, W.; Chi, M.; Balke, N.; Howe, J. Y.; Ward, T. Z.; Maksymovych, P.; Budai, J. D.; Tischler, J. Z.; Xu, R.; Liu, W.; Christen, H. M.

doi:10.1002/adfm.201600468

Title: Ferroelectric Self-Poling, Switching, and Monoclinic Domain Configuration in BiFeO ₃ Thin Films

Journal Article · Mon May 23 00:00:00 EDT 2016 · Advanced Functional Materials

DOI:https://doi.org/10.1002/adfm.201600468· OSTI ID:1329754

Beekman, C. ^[1]; Siemons, W. ^[1]; Chi, M. ^[1]; Balke, N. ^[2]; Howe, J. Y. ^[1]; Ward, T. Z. ^[1]; Maksymovych, P. ^[2]; Budai, J. D. ^[1]; Tischler, J. Z. ^[3]; Xu, R. ^[3]; Liu, W. ^[3]; Christen, H. M. ^[4]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science and Technology Division; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science

Self-poling of ferroelectric films, i.e., a preferred, uniform direction of the ferroelectric polarization in as-grown samples is often observed yet poorly understood despite its importance for device applications. The multiferroic perovskite BiFeO₃, which crystallizes in two distinct structural polymorphs depending on applied epitaxial strain, is well known to exhibit self-poling. This study investigates the effect of self-poling on the monoclinic domain configuration and the switching properties of the two polymorphs of BiFeO₃ (R' and T') in thin films grown on LaAlO₃ substrates with slightly different La_0.3Sr_0.7MnO₃ buffer layers. This study shows that the polarization state formed during the growth acts as "imprint" on the polarization and that switching the polarization away from this self-poled direction can only be done at the expense of the sample's monoclinic domain configuration. The observed reduction of the monoclinic domain size is largely reversible; hence, the domain size is restored when the polarization is switched back to its original orientation. This is a direct consequence of the growth taking place in the polar phase (below T_c). Lastly, switching the polarization away from the preferred configuration, in which defects and domain patterns synergistically minimize the system's energy, leads to a domain state with smaller (and more highly strained and distorted) monoclinic domains

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725; AC02-06CH11357

OSTI ID:: 1329754

Alternate ID(s):: OSTI ID: 1339422

Journal Information:: Advanced Functional Materials, Vol. 26, Issue 28; ISSN 1616-301X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 25 works

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Photoassisted Electric Field Modulation of Multiple Nonvolatile Resistance States in Highly Strained Epitaxial BiFeO ₃ Heterostructures Li, Dong; Zheng, Dongxing; Jin, Chao Advanced Electronic Materials, Vol. 4, Issue 7 https://doi.org/10.1002/aelm.201800171	journal	May 2018
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