Strain Localization in Thin Films of Bi(Fe,Mn)O3 Due to the Formation of Stepped Mn4+-Rich Antiphase Boundaries
Abstract
Here, the atomic structure and chemistry of thin films of Bi(Fe,Mn)O3 (BFMO) films with a target composition of Bi2FeMnO6 on SrTiO3 are studied using scanning transmission electron microscopy imaging and electron energy loss spectroscopy. It is shown that Mn4+-rich antiphase boundaries are locally nucleated right at the film substrate and then form stepped structures that are approximately pyramidal in three dimensions. These have the effect of confining the material below the pyramids in a highly strained state with an out-of-plane lattice parameter close to 4.1 Å. Outside the area enclosed by the antiphase boundaries, the out-of-plane lattice parameter is much closer to bulk values for BFMO. This suggests that to improve the crystallographic perfection of the films whilst retaining the strain state through as much of the film as possible, ways need to be found to prevent nucleation of the antiphase boundaries. Since the antiphase boundaries seem to form from the interaction of Mn with the Ti in the substrate, one route to perform this would be to grow a thin buffer layer of pure BiFeO3 on the SrTiO3 substrate to minimise any Mn-Ti interactions.
- Authors:
- Publication Date:
- Research Org.:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1503034
- Alternate Identifier(s):
- OSTI ID: 1329687
- Report Number(s):
- LA-UR-15-23680
Journal ID: ISSN 1931-7573; 407; PII: 1116
- Grant/Contract Number:
- LDRD program; AC52-06NA25396
- Resource Type:
- Journal Article: Published Article
- Journal Name:
- Nanoscale Research Letters
- Additional Journal Information:
- Journal Name: Nanoscale Research Letters Journal Volume: 10 Journal Issue: 1; Journal ID: ISSN 1931-7573
- Publisher:
- Springer Science + Business Media
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; material science; thin films; interfaces; magnetic; bismuth ferrite; scanning transmission electron microscopy (STEM); strain; multiferroic; antiphase boundaries
Citation Formats
MacLaren, I., Sala, B., Andersson, S. M. L., Pennycook, T. J., Xiong, J., Jia, Q. X., Choi, E-M, and MacManus-Driscoll, J. L. Strain Localization in Thin Films of Bi(Fe,Mn)O3 Due to the Formation of Stepped Mn4+-Rich Antiphase Boundaries. United States: N. p., 2015.
Web. doi:10.1186/s11671-015-1116-8.
MacLaren, I., Sala, B., Andersson, S. M. L., Pennycook, T. J., Xiong, J., Jia, Q. X., Choi, E-M, & MacManus-Driscoll, J. L. Strain Localization in Thin Films of Bi(Fe,Mn)O3 Due to the Formation of Stepped Mn4+-Rich Antiphase Boundaries. United States. https://doi.org/10.1186/s11671-015-1116-8
MacLaren, I., Sala, B., Andersson, S. M. L., Pennycook, T. J., Xiong, J., Jia, Q. X., Choi, E-M, and MacManus-Driscoll, J. L. 2015.
"Strain Localization in Thin Films of Bi(Fe,Mn)O3 Due to the Formation of Stepped Mn4+-Rich Antiphase Boundaries". United States. https://doi.org/10.1186/s11671-015-1116-8.
@article{osti_1503034,
title = {Strain Localization in Thin Films of Bi(Fe,Mn)O3 Due to the Formation of Stepped Mn4+-Rich Antiphase Boundaries},
author = {MacLaren, I. and Sala, B. and Andersson, S. M. L. and Pennycook, T. J. and Xiong, J. and Jia, Q. X. and Choi, E-M and MacManus-Driscoll, J. L.},
abstractNote = {Here, the atomic structure and chemistry of thin films of Bi(Fe,Mn)O3 (BFMO) films with a target composition of Bi2FeMnO6 on SrTiO3 are studied using scanning transmission electron microscopy imaging and electron energy loss spectroscopy. It is shown that Mn4+-rich antiphase boundaries are locally nucleated right at the film substrate and then form stepped structures that are approximately pyramidal in three dimensions. These have the effect of confining the material below the pyramids in a highly strained state with an out-of-plane lattice parameter close to 4.1 Å. Outside the area enclosed by the antiphase boundaries, the out-of-plane lattice parameter is much closer to bulk values for BFMO. This suggests that to improve the crystallographic perfection of the films whilst retaining the strain state through as much of the film as possible, ways need to be found to prevent nucleation of the antiphase boundaries. Since the antiphase boundaries seem to form from the interaction of Mn with the Ti in the substrate, one route to perform this would be to grow a thin buffer layer of pure BiFeO3 on the SrTiO3 substrate to minimise any Mn-Ti interactions.},
doi = {10.1186/s11671-015-1116-8},
url = {https://www.osti.gov/biblio/1503034},
journal = {Nanoscale Research Letters},
issn = {1931-7573},
number = 1,
volume = 10,
place = {United States},
year = {Sat Oct 17 00:00:00 EDT 2015},
month = {Sat Oct 17 00:00:00 EDT 2015}
}
Web of Science
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Works referencing / citing this record:
Engineering antiphase boundaries in epitaxial SrTiO 3 to achieve forming free memristive devices
journal, October 2019
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