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Title: Optical properties and carrier dynamics of GaAs/GaInAs multiple-quantum-well shell grown on GaAs nanowire by molecular beam epitaxy

Abstract

GaAs/GaInAs multiple-quantum-well (MQW) shells having different GaInAs shell width formed on the surface of self-catalyzed GaAs core nanowires (NWs) are grown on (100) Si substrate using molecular beam epitaxy. The photoluminescence emission from GaAs/GaInAs MQW shells and the carrier lifetime could be varied by changing the width of GaInAs shell. Time-resolved photoluminescence measurements showed that the carrier lifetime had a fast and slow decay owing to the mixing of wurtzite and zinc-blende structures of the NWs. Furthermore, strain relaxation caused the carrier lifetime to decrease beyond a certain thickness of GaInAs quantum well shells.

Authors:
ORCiD logo; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1329457
Report Number(s):
NREL/JA-5K00-67298
Journal ID: ISSN 1567-1739
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Journal Article
Journal Name:
Current Applied Physics
Additional Journal Information:
Journal Volume: 16; Journal Issue: 12; Journal ID: ISSN 1567-1739
Publisher:
Korean Physical Society
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; molecular beam epitaxy; III-V semiconductors; optical characterization; epitaxy growth; nanowire

Citation Formats

Park, Kwangwook, Ravindran, Sooraj, Ju, Gun Wu, Min, Jung-Wook, Kang, Seokjin, Myoung, NoSoung, Yim, Sang-Youp, Jo, Yong-Ryun, Kim, Bong-Joong, and Lee, Yong Tak. Optical properties and carrier dynamics of GaAs/GaInAs multiple-quantum-well shell grown on GaAs nanowire by molecular beam epitaxy. United States: N. p., 2016. Web. doi:10.1016/j.cap.2016.08.025.
Park, Kwangwook, Ravindran, Sooraj, Ju, Gun Wu, Min, Jung-Wook, Kang, Seokjin, Myoung, NoSoung, Yim, Sang-Youp, Jo, Yong-Ryun, Kim, Bong-Joong, & Lee, Yong Tak. Optical properties and carrier dynamics of GaAs/GaInAs multiple-quantum-well shell grown on GaAs nanowire by molecular beam epitaxy. United States. doi:10.1016/j.cap.2016.08.025.
Park, Kwangwook, Ravindran, Sooraj, Ju, Gun Wu, Min, Jung-Wook, Kang, Seokjin, Myoung, NoSoung, Yim, Sang-Youp, Jo, Yong-Ryun, Kim, Bong-Joong, and Lee, Yong Tak. Thu . "Optical properties and carrier dynamics of GaAs/GaInAs multiple-quantum-well shell grown on GaAs nanowire by molecular beam epitaxy". United States. doi:10.1016/j.cap.2016.08.025.
@article{osti_1329457,
title = {Optical properties and carrier dynamics of GaAs/GaInAs multiple-quantum-well shell grown on GaAs nanowire by molecular beam epitaxy},
author = {Park, Kwangwook and Ravindran, Sooraj and Ju, Gun Wu and Min, Jung-Wook and Kang, Seokjin and Myoung, NoSoung and Yim, Sang-Youp and Jo, Yong-Ryun and Kim, Bong-Joong and Lee, Yong Tak},
abstractNote = {GaAs/GaInAs multiple-quantum-well (MQW) shells having different GaInAs shell width formed on the surface of self-catalyzed GaAs core nanowires (NWs) are grown on (100) Si substrate using molecular beam epitaxy. The photoluminescence emission from GaAs/GaInAs MQW shells and the carrier lifetime could be varied by changing the width of GaInAs shell. Time-resolved photoluminescence measurements showed that the carrier lifetime had a fast and slow decay owing to the mixing of wurtzite and zinc-blende structures of the NWs. Furthermore, strain relaxation caused the carrier lifetime to decrease beyond a certain thickness of GaInAs quantum well shells.},
doi = {10.1016/j.cap.2016.08.025},
journal = {Current Applied Physics},
issn = {1567-1739},
number = 12,
volume = 16,
place = {United States},
year = {2016},
month = {12}
}