Improving the radiation hardness of graphene field effect transistors
- Columbia Univ., New York, NY (United States). Dept. of Electrical Engineering
- Brookhaven National Lab. (BNL), Upton, NY (United States). Chemistry Division
- Columbia Univ., New York, NY (United States). Dept. of Mechanical Engineering
Ionizing radiation poses a significant challenge to the operation and reliability of conventional silicon-based devices. In this paper, we report the effects of gamma radiation on graphene field-effect transistors (GFETs), along with a method to mitigate those effects by developing a radiation-hardened version of our back-gated GFETs. We demonstrate that activated atmospheric oxygen from the gamma ray interaction with air damages the semiconductor device, and damage to the substrate contributes additional threshold voltage instability. Our radiation-hardened devices, which have protection against these two effects, exhibit minimal performance degradation, improved stability, and significantly reduced hysteresis after prolonged gamma radiation exposure. Finally, we believe this work provides an insight into graphene's interactions with ionizing radiation that could enable future graphene-based electronic devices to be used for space, military, and other radiation-sensitive applications.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States); Columbia Univ., New York, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); Defense Threat Reduction Agency (DTRA) (United States)
- Grant/Contract Number:
- SC0012704; AC02-98CH10886; DMR-1420634; HDTRA1-11-0022
- OSTI ID:
- 1341676
- Alternate ID(s):
- OSTI ID: 1328601
- Report Number(s):
- BNL-113404-2017-JA; R&D Project: CO031; KC0304030; TRN: US1701532
- Journal Information:
- Applied Physics Letters, Vol. 109, Issue 15; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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