Implant isolation of In{sub {ital x}}Al{sub 1{minus}{ital x}}N and In{sub {ital x}}Ga{sub 1{minus}{ital x}}N
- University of Florida, Gainesville, Florida 32611 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
{ital N}-type layers of In{sub {ital x}}Al{sub 1{minus}{ital x}}N and In{sub {ital x}}Ga{sub 1{minus}{ital x}}N were implanted with multiple energy N{sup +}, F{sup +}, or O{sup +} ions at doses in the range 5{times}10{sup 12}--5{times}10{sup 14} cm{sup {minus}2}, and subsequently annealed up to 900 {degree}C. Increases in sheet resistance of up to factors of {similar_to}10{sup 4} were achieved in In{sub 0.75}Al{sub 0.25}N after implantation at the higher doses, followed by annealing at 600--700 {degree}C. The behavior for In{sub {ital x}}Ga{sub 1{minus}{ital x}}N followed the same trend, with somewhat lower increases in sheet resistance. The implantation creates deep acceptor states in the upper part of the band gap of both types of material, rather than at midgap, which is the optimum situation for implant isolation. {copyright} {ital 1995} {ital American} {ital Vacuum} {ital Society}
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 132857
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 13, Issue 6; Other Information: PBD: Nov 1995
- Country of Publication:
- United States
- Language:
- English
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