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Title: Surface nanopattern formation due to current-induced homoepitaxial nanowire edge instability

Authors:
; ORCiD logo;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1328492
Grant/Contract Number:
DEFG02- 07ER46407
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 11; Related Information: CHORUS Timestamp: 2016-12-22 00:12:58; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Kumar, Ashish, Dasgupta, Dwaipayan, and Maroudas, Dimitrios. Surface nanopattern formation due to current-induced homoepitaxial nanowire edge instability. United States: N. p., 2016. Web. doi:10.1063/1.4962730.
Kumar, Ashish, Dasgupta, Dwaipayan, & Maroudas, Dimitrios. Surface nanopattern formation due to current-induced homoepitaxial nanowire edge instability. United States. doi:10.1063/1.4962730.
Kumar, Ashish, Dasgupta, Dwaipayan, and Maroudas, Dimitrios. 2016. "Surface nanopattern formation due to current-induced homoepitaxial nanowire edge instability". United States. doi:10.1063/1.4962730.
@article{osti_1328492,
title = {Surface nanopattern formation due to current-induced homoepitaxial nanowire edge instability},
author = {Kumar, Ashish and Dasgupta, Dwaipayan and Maroudas, Dimitrios},
abstractNote = {},
doi = {10.1063/1.4962730},
journal = {Applied Physics Letters},
number = 11,
volume = 109,
place = {United States},
year = 2016,
month = 9
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4962730

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  • Dewetting and nanopattern formation of 3{endash}10 nm Pt thin films upon ion irradiation is studied using scanning electron microscopy (SEM). Lateral feature size and the fraction of exposed surface area are extracted from SEM images and analyzed as functions of ion dose. The dewetting phenomenon has little temperature dependence for 3 nm Pt films irradiated by 800 keV Kr{sup +} at temperatures ranging from 80 to 823 K. At 893 K, the films dewet without irradiation, and no pattern formation is observed even after irradiation. The thickness of the Pt films, in the range 3{endash}10 nm, influences the pattern formation,more » with the lateral feature size increasing approximately linearly with film thickness. The effect of different ion species and energies on the dewetting process is also investigated using 800 keV Kr{sup +} and Ar{sup +} irradiation and 19.5keVHe{sup +}, Ar{sup +}, Kr{sup +}, and Xe{sup +} irradiation. The lateral feature size and exposed surface fraction scale with energy deposition density (J/cm2) for all conditions except 19.5keVXe{sup +} irradiation. {copyright} 2001 American Institute of Physics.« less
  • The effect of intentional surface oxide formation on band-edge photoluminescence (PL) of Ge nanowires was investigated. Thermal oxidation in molecular O{sub 2} was used to produce a surface oxide layer on assemblies of single crystal nanowires grown by the vapor-liquid-solid method. With increasing oxidation of the wires, the band-edge PL associated with the indirect gap transition becomes more intense. X-ray photoelectron spectroscopy confirms the formation of an increasingly GeO{sub 2}-like surface oxide under annealing conditions that enhance the indirect-gap PL, consistent with surface oxide passivation of nonradiative recombination centers initially present on the nanowire surface.
  • The electrical and optical properties of dislocation arrays (DAs) in 4H-SiC homoepitaxial layers were studied by using electron-beam-induced current (EBIC) and cathodoluminescence (CL) techniques. EBIC observations show that under electron-beam irradiation, the DAs are easily dissociated to form rhombic stacking faults (SFs), whereas the single threading dislocations are not. CL results demonstrate that a new peak (417 nm) appears at the formed SFs, which is the same as the phenomenon observed from dissociating basal plane dislocations. The dissociation mechanisms of DAs are proposed based on the assumption that small basal segments exist. The dissociation velocity of each dislocation in themore » DAs is discussed according to its recombination activity.« less