Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model

Wampler, William R.; Modine, Normand A.

doi:10.1063/1.4963873

Title: Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model

Journal Article · Tue Oct 04 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4963873· OSTI ID:1301989

Wampler, William R. ^[1]; Modine, Normand A. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Carrier transport and recombination are modeled for a heterojunction diode containing defect traps. Here, particular attention is given to the role of band-to-trap tunneling and how it is affected by band offsets at the junction. Tunneled states are characterized by numerical solution of the Schrodinger equation, and the interaction with traps is treated assuming capture and emission by the multi-phonon mechanism. It is shown that tunneling can increase carrier recombination at defects by orders magnitude in the presence of large band offsets. This explains why InGaP/GaAs/GaAs Npn HBTs with displacement damage from energetic particle irradiation have higher carrier recombination in the emitter-base depletion region.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Security

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1301989

Alternate ID(s):: OSTI ID: 1328481

Report Number(s):: SAND-2016-4695J; 640353; TRN: US1700087

Journal Information:: Journal of Applied Physics, Vol. 120, Issue 13; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 7 works

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