Nanowire growth kinetics in aberration corrected environmental transmission electron microscopy

Chou, Yi -Chia; Panciera, Federico; Reuter, Mark C.; Stach, Eric A.; Ross, Frances M.

doi:10.1039/c6cc00303f

Title: Nanowire growth kinetics in aberration corrected environmental transmission electron microscopy

Journal Article · Tue Mar 15 00:00:00 EDT 2016 · ChemComm

DOI:https://doi.org/10.1039/c6cc00303f· OSTI ID:1328372

Chou, Yi -Chia ^[1]; Panciera, Federico ^[2]; Reuter, Mark C. ^[3]; Stach, Eric A. ^[4]; Ross, Frances M. ^[3]

Brookhaven National Lab. (BNL), Upton, NY (United States); National Chiao Tung Univ., Hsinchu (Taiwan); IBM T.J. Watson Research Center, Yorktown Heights, NY (United States)
IBM T.J. Watson Research Center, Yorktown Heights, NY (United States); Univ. of Cambridge, Cambridge (United Kingdom)
IBM T.J. Watson Research Center, Yorktown Heights, NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)

Here, we visualize atomic level dynamics during Si nanowire growth using aberration corrected environmental transmission electron microscopy, and compare with lower pressure results from ultra-high vacuum microscopy. We discuss the importance of higher pressure observations for understanding growth mechanisms and describe protocols to minimize effects of the higher pressure background gas.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC00112704

OSTI ID:: 1328372

Report Number(s):: BNL-112678-2016-JA; CHCOFS; R&D Project: 16060; 16060; KC0403020

Journal Information:: ChemComm, Vol. 52, Issue 33; ISSN 1359-7345

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 14 works

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