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Title: Modification of the electronic properties of hexagonal boron-nitride in BN/graphene vertical heterostructures

Abstract

Van der Waals (vdW) heterostructures consist of isolated atomic planar structures, assembled layer- by-layer into desired structures in a well-defined sequence. Graphene deposited on hexagonal boron nitride (h-BN) has been first considered as a testbed system for vdW heterostructures, and many others have been demonstrated both theoretically and experimentally, revealing many attractive properties and phenomena. However, much less emphasis has been placed on how graphene actively affects h-BN properties. Here, we perform local probe measurements on single-layer h-BN grown over graphene and highlight the manifestation of a proximity effect that significantly affects the electronic properties of h-BN due to its coupling with the underlying graphene. We find electronic states originating from the graphene layer and the Cu substrate to be injected into the wide electronic gap of the h-BN top layer. Such proximity effect is further confirmed in a study of the variation of h-BN in-gap states with interlayer couplings, elucidated using a combination of topographical/ spectroscopic measurements and first-principles density functional theory calculations. In conclusion, the findings of this work indicate the potential of mutually engineering electronic properties of the components of vdW heterostructures.

Authors:
 [1];  [2];  [2];  [3];  [4];  [3];  [5];  [6]
  1. Huazhong Univ. of Science and Technology, Wuhan (China). School of Physics
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
  3. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Electrical Engineering and Computer Science
  4. Soochow Univ., Jiangsu (China). Inst. of Functional Nano and Soft Materials (FUNSOM) and Collaborative Innovation Center of Suzhou Science and Technology
  5. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Electrical Engineering and Computer Science; Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of of Physics
  6. Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Physics, Applied Physics, and Astronomy
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC); National Natural Science Foundation of China (NNSFC); National Science Foundation (NSF)
OSTI Identifier:
1328322
Grant/Contract Number:
AC05-00OR22725; 11574095; EFRI-1542707; DMR0845358; N00014-09-1-1063
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
2D Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 4; Journal ID: ISSN 2053-1583
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; graphene; heterostructure; STM/STS; DFT

Citation Formats

Pan, Minghu, Liang, Liangbo, Lin, Wenzhi, Kim, Soo Min, Li, Qing, Kong, Jing, Dresselhaus, Mildred S., and Meunier, Vincent. Modification of the electronic properties of hexagonal boron-nitride in BN/graphene vertical heterostructures. United States: N. p., 2016. Web. doi:10.1088/2053-1583/3/4/045002.
Pan, Minghu, Liang, Liangbo, Lin, Wenzhi, Kim, Soo Min, Li, Qing, Kong, Jing, Dresselhaus, Mildred S., & Meunier, Vincent. Modification of the electronic properties of hexagonal boron-nitride in BN/graphene vertical heterostructures. United States. doi:10.1088/2053-1583/3/4/045002.
Pan, Minghu, Liang, Liangbo, Lin, Wenzhi, Kim, Soo Min, Li, Qing, Kong, Jing, Dresselhaus, Mildred S., and Meunier, Vincent. 2016. "Modification of the electronic properties of hexagonal boron-nitride in BN/graphene vertical heterostructures". United States. doi:10.1088/2053-1583/3/4/045002. https://www.osti.gov/servlets/purl/1328322.
@article{osti_1328322,
title = {Modification of the electronic properties of hexagonal boron-nitride in BN/graphene vertical heterostructures},
author = {Pan, Minghu and Liang, Liangbo and Lin, Wenzhi and Kim, Soo Min and Li, Qing and Kong, Jing and Dresselhaus, Mildred S. and Meunier, Vincent},
abstractNote = {Van der Waals (vdW) heterostructures consist of isolated atomic planar structures, assembled layer- by-layer into desired structures in a well-defined sequence. Graphene deposited on hexagonal boron nitride (h-BN) has been first considered as a testbed system for vdW heterostructures, and many others have been demonstrated both theoretically and experimentally, revealing many attractive properties and phenomena. However, much less emphasis has been placed on how graphene actively affects h-BN properties. Here, we perform local probe measurements on single-layer h-BN grown over graphene and highlight the manifestation of a proximity effect that significantly affects the electronic properties of h-BN due to its coupling with the underlying graphene. We find electronic states originating from the graphene layer and the Cu substrate to be injected into the wide electronic gap of the h-BN top layer. Such proximity effect is further confirmed in a study of the variation of h-BN in-gap states with interlayer couplings, elucidated using a combination of topographical/ spectroscopic measurements and first-principles density functional theory calculations. In conclusion, the findings of this work indicate the potential of mutually engineering electronic properties of the components of vdW heterostructures.},
doi = {10.1088/2053-1583/3/4/045002},
journal = {2D Materials},
number = 4,
volume = 3,
place = {United States},
year = 2016,
month = 9
}

Journal Article:
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