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Title: CHARACTERIZATION OF PRECIPITATES IN CUBIC SILICON CARBIDE IMPLANTED WITH 25Mg+ IONS

Abstract

The aim of this study is to characterize precipitates in Mg+ ion implanted and high-temperature annealed cubic silicon carbide using scanning transmission electron microscopy, electron energy loss spectroscopy and atom probe tomography.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1328058
Report Number(s):
PNNL-SA-120391
DOE Contract Number:
AC05-76RL01830
Resource Type:
Book
Resource Relation:
Related Information: In Fusion Materials Semianual Report for the Period Ending 06/30/2016, 60:72-77. DOE/ER-0313/60
Country of Publication:
United States
Language:
English

Citation Formats

Jiang, Weilin, Spurgeon, Steven R., Liu, Jia, Edwards, Danny J., Schreiber, Daniel K., Henager, Charles H., Kurtz, Richard J., and Wang, Yongqiang. CHARACTERIZATION OF PRECIPITATES IN CUBIC SILICON CARBIDE IMPLANTED WITH 25Mg+ IONS. United States: N. p., 2016. Web.
Jiang, Weilin, Spurgeon, Steven R., Liu, Jia, Edwards, Danny J., Schreiber, Daniel K., Henager, Charles H., Kurtz, Richard J., & Wang, Yongqiang. CHARACTERIZATION OF PRECIPITATES IN CUBIC SILICON CARBIDE IMPLANTED WITH 25Mg+ IONS. United States.
Jiang, Weilin, Spurgeon, Steven R., Liu, Jia, Edwards, Danny J., Schreiber, Daniel K., Henager, Charles H., Kurtz, Richard J., and Wang, Yongqiang. 2016. "CHARACTERIZATION OF PRECIPITATES IN CUBIC SILICON CARBIDE IMPLANTED WITH 25Mg+ IONS". United States. doi:.
@article{osti_1328058,
title = {CHARACTERIZATION OF PRECIPITATES IN CUBIC SILICON CARBIDE IMPLANTED WITH 25Mg+ IONS},
author = {Jiang, Weilin and Spurgeon, Steven R. and Liu, Jia and Edwards, Danny J. and Schreiber, Daniel K. and Henager, Charles H. and Kurtz, Richard J. and Wang, Yongqiang},
abstractNote = {The aim of this study is to characterize precipitates in Mg+ ion implanted and high-temperature annealed cubic silicon carbide using scanning transmission electron microscopy, electron energy loss spectroscopy and atom probe tomography.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2016,
month = 9
}

Book:
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  • This report describes the progress of our current experimental effort on Mg+ ion implanted 3C-SiC. Following our initial study [ ] that suggests possible formation of Mg2Si and MgC2 precipitates as well as tetrahedral voids in 24Mg+ ion implanted 3C-SiC, we have designed specific experiments to confirm the results and examine the inclusions and defects. Relatively low fluence (5.0×1015 24Mg+/cm2) implantation in 3C-SiC was performed to reduce defect concentrations and isolate individual defect features for characterization. In addition, 25Mg+ isotope was implanted in 3C-SiC to the same previously applied ion fluence (9.6×1016 ions/cm2) for atom probe tomography (APT) study ofmore » precipitates. Each set of the samples was annealed at 1573 K for 2, 6 and 12 h, respectively. The depth profiles of the implanted Mg were measured using secondary ion mass spectrometry (SIMS) before and after the annealing steps. The samples are currently being analyzed using transmission electron microscopy (TEM) and APT.« less
  • This study aims to characterize precipitates and defect structures in Mg+ ion implanted and high-temperature annealed cubic silicon carbide (3C-SiC).
  • Strong blue, red and near-infrared photoluminescence has been observed from Si{sup +}-implanted and pulse-annealed SiO{sub 2} layers. Raman scattering and high-resolution electron microscopy analyses have revealed a correlation between the structure of the Si inclusions in the SiO{sub 2} matrix and the photoluminescence. Structural transformations in the Si-rich SiO{sub 2} layers during pulse and furnace annealing have been discussed in terms of the changes in the light emission observed experimentally. Small Si clusters, non-crystalline inclusions and nanocrystals are believed to be the light sources. The blue, red and near-infrared photoluminescence is associated with small complexes of excess Si atoms, non-crystallinemore » Si nanoinclusions and quantum-confined Si nanocrystals, respectively.« less
  • The diffusion of aluminum in silicon carbide during high-temperature Al{sup +} ion implantation was studied using secondary ion mass spectrometry (SIMS). Transmission electron microscopy (TEM) has been used to determine the microstructure of the implanted sample. A 6H-SiC wafer was implanted at a temperature of 1,800 C with 40 keV Al ions to a dose of 2 {times} 10{sup 16} cm{sup {minus}2}. It was established that an Al step-like profile starts at the interface between the crystal region and the damaged layer. The radiation enhanced diffusion coefficient of Al at the interface was determined to be D{sub i} = 2.8more » {times} 10{sup {minus}12} cm{sup 2}/s, about two orders of magnitude higher than the thermally activated diffusion coefficient. The Si vacancy-rich near-surface layer formed by this implantation condition is believed to play a significant role in enhanced Al diffusion.« less
  • As a candidate material for fusion reactor designs, silicon carbide (SiC) under high-energy neutron irradiation undergoes atomic displacement damage and transmutation reactions that create magnesium as one of the major metallic products. The presence of Mg and lattice disorder in SiC is expected to affect structural stability and degrade thermo-mechanical properties that could limit SiC lifetime for service. We have initiated a combined experimental and computational study that uses Mg+ ion implantation and multiscale modeling to investigate the structural and chemical effects in Mg implanted SiC and explore possible property degradation mechanisms.