Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates
- Univ. of Florida, Gainesville, FL (United States)
- Triva Corp., Oakland, CA (United States)
- Arizona State Univ., Tempe, AZ (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Here, AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on sapphire substrates, using ZrTi buffer layers to provide in-plane lattice-matching to hexagonal GaN. X-ray diffraction (XRD) as well as cross-section transmission electron microscopy (TEM) were used to assess the quality of the HEMT structure. The XRD 2θ scans showed full-width-at-half-maximum values of 0.16°, 0.07°, and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM studies of the GaN buffer layer and the AlN/ZrTi/AlN stack showed the importance of growing thin AlN buffer layers on the ZrTi layer prior to growth of the GaN buffer layer. The density of threading dislocations in the GaN channel layer of the HEMT structure was estimated to be in the 108 cm–2 range. The HEMT device exhibited a saturation drain current density of 820 mA/mm, and the channel of the fabricated HEMTs could be well modulated. A cutoff frequency (fT) of 8.9 GHz and a maximum frequency of oscillation (fmax) of 17.3 GHz were achieved for HEMTs with gate dimensions of 1 × 200 μm.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- Grant/Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1327654
- Journal Information:
- Journal of Vacuum Science and Technology B, Vol. 34, Issue 5; ISSN 2166-2746
- Publisher:
- American Vacuum Society/AIPCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Statistical Coulomb interactions in multi-beam SEM
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journal | December 2019 |
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