Synthesis of freestanding single-crystal perovskite films and heterostructures by etching of sacrificial water-soluble layers

Lu, Di; Baek, David J.; Hong, Seung Sae; Kourkoutis, Lena F.; Hikita, Yasuyuki; Hwang, Harold Y.

doi:10.1038/nmat4749

Title: Synthesis of freestanding single-crystal perovskite films and heterostructures by etching of sacrificial water-soluble layers

Journal Article · Mon Sep 12 00:00:00 EDT 2016 · Nature Materials

DOI:https://doi.org/10.1038/nmat4749· OSTI ID:1326981

Lu, Di ^[1]; Baek, David J. ^[2]; Hong, Seung Sae ^[3]; Kourkoutis, Lena F. ^[4]; Hikita, Yasuyuki ^[5]; Hwang, Harold Y. ^[3]

Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
Cornell Univ., Ithaca, NY (United States). Baker Lab.
SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)
Cornell Univ., Ithaca, NY (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States)

Here, the ability to create and manipulate materials in two-dimensional (2D) form has repeatedly had transformative impact on science and technology. In parallel with the exfoliation and stacking of intrinsically layered crystals^{1, 2, 3, 4, 5}, atomic-scale thin film growth of complex materials has enabled the creation of artificial 2D heterostructures with novel functionality^{6, 7, 8, 9} and emergent phenomena, as seen in perovskite heterostructures^{10, 11, 12}. However, separation of these layers from the growth substrate has proved challenging, limiting the manipulation capabilities of these heterostructures with respect to exfoliated materials. Here we present a general method to create freestanding perovskite membranes. The key is the epitaxial growth of water-soluble Sr₃Al₂O₆ on perovskite substrates, followed by in situ growth of films and heterostructures. Millimetre-size single-crystalline membranes are produced by etching the Sr₃Al₂O₆ layer in water, providing the opportunity to transfer them to arbitrary substrates and integrate them with heterostructures of semiconductors and layered compounds^{13, 14}.

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Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-76SF00515

OSTI ID:: 1326981

Report Number(s):: SLAC-PUB-16802; nmat4749

Journal Information:: Nature Materials, Journal Name: Nature Materials; ISSN 1476-1122

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 301 works

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