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Title: Pure electronic metal-insulator transition at the interface of complex oxides

Abstract

We observed complex materials in electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. We demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. Furthermore, these findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.

Authors:
 [1];  [2];  [3];  [1];  [1];  [4];  [4];  [5];  [3];  [3];  [1]
  1. Univ. of Arkansas, Fayetteville, AR (United States). Dept. of Physics
  2. Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics nad Astronomy
  3. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source
  4. Univ. of Illinois, Urbana, IL (United States). Dept. of Materials Science and Engineering
  5. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division; Gordon and Betty Moore Foundation; University of Tennessee
OSTI Identifier:
1326934
Grant/Contract Number:
AC02-06CH11357; AC02-05CH11231
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Meyers, D., Liu, Jian, Freeland, J. W., Middey, S., Kareev, M., Kwon, Jihwan, Zuo, J. M., Chuang, Yi-De, Kim, J. W., Ryan, P. J., and Chakhalian, J.. Pure electronic metal-insulator transition at the interface of complex oxides. United States: N. p., 2016. Web. doi:10.1038/srep27934.
Meyers, D., Liu, Jian, Freeland, J. W., Middey, S., Kareev, M., Kwon, Jihwan, Zuo, J. M., Chuang, Yi-De, Kim, J. W., Ryan, P. J., & Chakhalian, J.. Pure electronic metal-insulator transition at the interface of complex oxides. United States. doi:10.1038/srep27934.
Meyers, D., Liu, Jian, Freeland, J. W., Middey, S., Kareev, M., Kwon, Jihwan, Zuo, J. M., Chuang, Yi-De, Kim, J. W., Ryan, P. J., and Chakhalian, J.. 2016. "Pure electronic metal-insulator transition at the interface of complex oxides". United States. doi:10.1038/srep27934. https://www.osti.gov/servlets/purl/1326934.
@article{osti_1326934,
title = {Pure electronic metal-insulator transition at the interface of complex oxides},
author = {Meyers, D. and Liu, Jian and Freeland, J. W. and Middey, S. and Kareev, M. and Kwon, Jihwan and Zuo, J. M. and Chuang, Yi-De and Kim, J. W. and Ryan, P. J. and Chakhalian, J.},
abstractNote = {We observed complex materials in electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. We demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. Furthermore, these findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.},
doi = {10.1038/srep27934},
journal = {Scientific Reports},
number = ,
volume = 6,
place = {United States},
year = 2016,
month = 6
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 2works
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  • In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO 3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as amore » powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.« less
  • Cited by 10
  • Electroforming and switching effects in sandwich structures based on anodic films of transition metal oxides (V, Nb, Ti, Fe, Ta, W, Zr, Hf, Mo) have been studied. After being electroformed, some materials exhibited current-controlled negative resistance with S-shaped V-I characteristics. For V, Fe, Ti, and Nb oxides, the temperature dependence of the threshold voltage has been measured. As the temperature increased, V{sub th} decreased to zero at a critical temperature T{sub O}, which depended on the film material. Comparison of the T{sub O} values with the temperatures of metal-insulator phase transition for some compounds (T{sub t}=120 K for Fe{sub 3}O{submore » 4}, 340 K for VO{sub 2}, {approximately}500 K for Ti{sub 2}O{sub 3}, and 1070 K for NbO{sub 2}) showed that switching was related to the transition in the applied electric field. Channels consisting of the above-metioned lower oxides were formed in the initial anodic films during the electroforming. The possibility of formation of these oxides with a metal-insulator transition was confirmed by thermodynamic calculations.« less
  • Cited by 36
  • On the basis of our theoretical examination of the insulating state of V/sub 2/O/sub 3/ reported in the preceding two papers and the experimental results of NMR and susceptibility measurements of the metallic phase, we conjecture the highly correlated electron-gas character in this latter phase of V/sub 2/O/sub 3/. We present arguments for the first-order metal-insulator transition which we consider to be entropy driven passing from the insulating state to a paramagnetic metallic one of nearly equal inner energy but considerably different entropy due to the breakdown of the magnetic and orbital long-range order present in the insulating phase. Wemore » believe that the origin of the highly correlated electron gas in the paramagnetic metallic phase lies in the stability of the electronic molecular state of the V pairs along the c axis which persist through the metallic phase, a picture which estimates extremely well the observed entropy in this phase. The lattice distortion observed in the insulating phase is believed to be purely magnetostrictive and of no direct importance to the transition mechanism.« less