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Title: Pure electronic metal-insulator transition at the interface of complex oxides

Abstract

We observed complex materials in electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. We demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. Furthermore, these findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.

Authors:
 [1];  [2];  [3];  [1];  [1];  [4];  [4];  [5];  [3];  [3];  [1]
  1. Univ. of Arkansas, Fayetteville, AR (United States). Dept. of Physics
  2. Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics nad Astronomy
  3. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source
  4. Univ. of Illinois, Urbana, IL (United States). Dept. of Materials Science and Engineering
  5. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division; Gordon and Betty Moore Foundation; University of Tennessee
OSTI Identifier:
1326934
Alternate Identifier(s):
OSTI ID: 1379402
Grant/Contract Number:  
AC02-06CH11357; AC02-05CH11231
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Meyers, D., Liu, Jian, Freeland, J. W., Middey, S., Kareev, M., Kwon, Jihwan, Zuo, J. M., Chuang, Yi-De, Kim, J. W., Ryan, P. J., and Chakhalian, J. Pure electronic metal-insulator transition at the interface of complex oxides. United States: N. p., 2016. Web. doi:10.1038/srep27934.
Meyers, D., Liu, Jian, Freeland, J. W., Middey, S., Kareev, M., Kwon, Jihwan, Zuo, J. M., Chuang, Yi-De, Kim, J. W., Ryan, P. J., & Chakhalian, J. Pure electronic metal-insulator transition at the interface of complex oxides. United States. doi:10.1038/srep27934.
Meyers, D., Liu, Jian, Freeland, J. W., Middey, S., Kareev, M., Kwon, Jihwan, Zuo, J. M., Chuang, Yi-De, Kim, J. W., Ryan, P. J., and Chakhalian, J. Tue . "Pure electronic metal-insulator transition at the interface of complex oxides". United States. doi:10.1038/srep27934. https://www.osti.gov/servlets/purl/1326934.
@article{osti_1326934,
title = {Pure electronic metal-insulator transition at the interface of complex oxides},
author = {Meyers, D. and Liu, Jian and Freeland, J. W. and Middey, S. and Kareev, M. and Kwon, Jihwan and Zuo, J. M. and Chuang, Yi-De and Kim, J. W. and Ryan, P. J. and Chakhalian, J.},
abstractNote = {We observed complex materials in electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge, and magnetic order parameters frequently obscures the underlying physics. We demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. Furthermore, these findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.},
doi = {10.1038/srep27934},
journal = {Scientific Reports},
number = ,
volume = 6,
place = {United States},
year = {Tue Jun 21 00:00:00 EDT 2016},
month = {Tue Jun 21 00:00:00 EDT 2016}
}

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Cited by: 3 works
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Works referenced in this record:

Oxide Interfaces--An Opportunity for Electronics
journal, March 2010


Metal-insulator transitions
journal, October 1998

  • Imada, Masatoshi; Fujimori, Atsushi; Tokura, Yoshinori
  • Reviews of Modern Physics, Vol. 70, Issue 4, p. 1039-1263
  • DOI: 10.1103/RevModPhys.70.1039