Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature Te125 NMR

Cui, J.; Levin, E. M.; Lee, Y.; Furukawa, Y.

doi:10.1103/PhysRevB.94.085203

Title: Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low-temperature ${}^{125}{Te}$ NMR

Journal Article · Thu Aug 18 00:00:00 EDT 2016 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.94.085203· OSTI ID:1326845

Cui, J. ^[1]; Levin, E. M. ^[2]; Lee, Y. ^[3]; Furukawa, Y. ^[2]

Ames Lab. and Iowa State Univ., Ames, IA (United States); Iowa State Univ., Ames, IA (United States). Dept. of Chemistry
Ames Lab. and Iowa State Univ., Ames, IA (United States); Iowa State Univ., Ames, IA (United States). Dept. of Physics and Astronomy
Ames Lab. and Iowa State Univ., Ames, IA (United States)

We have carried out ¹²⁵Te nuclear magnetic resonance (NMR) in a wide temperature range of 1.5–300 K to investigate the electronic properties of Ge₅₀ Te₅₀, Ag₂ Ge₄₈Te₅₀ , and Sb₂ Ge₄₈ Te₅₀ from a microscopic point of view. From the temperature dependence of the NMR shift (K) and nuclear spin lattice relaxation rate (1/T₁), we found that two bands contribute to the physical properties of the materials. One band overlaps the Fermi level providing the metallic state where no strong electron correlations are revealed by Korringa analysis. The other band is separated from the Fermi level by an energy gap of E_g/k_B ~67 K, which gives rise to semiconductorlike properties. First-principles calculation reveals that the metallic band originates from the Ge vacancy while the semiconductorlike band is related to the fine structure of the density of states near the Fermi level. We find low-temperature Te125 NMR data for the materials studied here clearly show that Ag substitution increases hole concentration while Sb substitution decreases it.

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Research Organization:: Ames Laboratory (AMES), Ames, IA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-07CH11358

OSTI ID:: 1326845

Alternate ID(s):: OSTI ID: 1298343

Report Number(s):: IS-J-9078; PRBMDO; TRN: US1700098

Journal Information:: Physical Review B, Vol. 94, Issue 8; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 4 works

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