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Title: Virtual substrates for epitaxial growth and methods of making the same

Abstract

A virtual substrate includes a handle support and a strain-relieved single crystalline layer on the handle support. A method of making the virtual substrate includes growing a coherently-strained single crystalline layer on an initial growth substrate, removing the initial growth substrate to relieve the strain on the single crystalline layer, and applying the strain-relieved single crystalline layer on a handle support.

Inventors:
; ; ;
Publication Date:
Research Org.:
California Institute of Technology, Pasadena, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1326802
Patent Number(s):
9,455,146
Application Number:
12/928,762
Assignee:
California Institute of Technology (Pasadena, CA) GFO
DOE Contract Number:
FG36-08GO18071
Resource Type:
Patent
Resource Relation:
Patent File Date: 2010 Dec 17
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Atwater, Harry A., Leite, Marina S., Warmann, Emily C., and Callahan, Dennis M. Virtual substrates for epitaxial growth and methods of making the same. United States: N. p., 2016. Web.
Atwater, Harry A., Leite, Marina S., Warmann, Emily C., & Callahan, Dennis M. Virtual substrates for epitaxial growth and methods of making the same. United States.
Atwater, Harry A., Leite, Marina S., Warmann, Emily C., and Callahan, Dennis M. 2016. "Virtual substrates for epitaxial growth and methods of making the same". United States. doi:. https://www.osti.gov/servlets/purl/1326802.
@article{osti_1326802,
title = {Virtual substrates for epitaxial growth and methods of making the same},
author = {Atwater, Harry A. and Leite, Marina S. and Warmann, Emily C. and Callahan, Dennis M.},
abstractNote = {A virtual substrate includes a handle support and a strain-relieved single crystalline layer on the handle support. A method of making the virtual substrate includes growing a coherently-strained single crystalline layer on an initial growth substrate, removing the initial growth substrate to relieve the strain on the single crystalline layer, and applying the strain-relieved single crystalline layer on a handle support.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2016,
month = 9
}

Patent:

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