Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Sol-gel process for the manufacture of high power switches

Patent ·
OSTI ID:1326800
According to one embodiment, a photoconductive semiconductor switch includes a structure of nanopowder of a high band gap material, where the nanopowder is optically transparent, and where the nanopowder has a physical characteristic of formation from a sol-gel process. According to another embodiment, a method includes mixing a sol-gel precursor compound, a hydroxy benzene and an aldehyde in a solvent thereby creating a mixture, causing the mixture to gel thereby forming a wet gel, drying the wet gel to form a nanopowder, and applying a thermal treatment to form a SiC nanopowder.
Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC52-07NA27344
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA)
Patent Number(s):
9,455,366
Application Number:
13/843,863
OSTI ID:
1326800
Country of Publication:
United States
Language:
English

References (1)

Low temperature sintering and elongated grain growth of 6H-SiC powder with AlB 2 and C additives journal February 1999