Growth of antimony doped P-type zinc oxide nanowires for optoelectronics
In a method of growing p-type nanowires, a nanowire growth solution of zinc nitrate (Zn(NO.sub.3).sub.2), hexamethylenetetramine (HMTA) and polyethylenemine (800 M.sub.w PEI) is prepared. A dopant solution to the growth solution, the dopant solution including an equal molar ration of sodium hydroxide (NaOH), glycolic acid (C.sub.2H.sub.4O.sub.3) and antimony acetate (Sb(CH.sub.3COO).sub.3) in water is prepared. The dopant solution and the growth solution combine to generate a resulting solution that includes antimony to zinc in a ratio of between 0.2% molar to 2.0% molar, the resulting solution having a top surface. An ammonia solution is added to the resulting solution. A ZnO seed layer is applied to a substrate and the substrate is placed into the top surface of the resulting solution with the ZnO seed layer facing downwardly for a predetermined time until Sb-doped ZnO nanowires having a length of at least 5 .mu.m have grown from the ZnO seed layer.
- Research Organization:
- Georgia Institute of Technology, Atlanta, GA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-07ER46394
- Assignee:
- Georgia Tech Research Corporation (Atlanta, GA)
- Patent Number(s):
- 9,455,399
- Application Number:
- 14/024,798
- OSTI ID:
- 1326799
- Resource Relation:
- Patent File Date: 2013 Sep 12
- Country of Publication:
- United States
- Language:
- English
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