skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Prediction of Quantum Anomalous Hall Insulator in half-fluorinated GaBi Honeycomb

Abstract

Using first-principles electronic structure calculations, we predict half-fluorinated GaBi honeycomb under tensile strain to harbor a quantum anomalous Hall (QAH) insulator phase. We show that this QAH phase is driven by a single inversion in the band structure at the Γ point. Moreover, we have computed the electronic spectrum of a half-fluorinated GaBi nanoribbon with zigzag edges, which shows that only one edge band crosses the Fermi level within the band gap. In conclusion, our results suggest that half-fluorination of the GaBi honeycomb under tensile strain could provide a new platform for developing novel spintronics devices based on the QAH effect.

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [3]
  1. National Sun Yat-Sen University, Kaohsiuing (Taiwan). Dept. of Physics
  2. National Univ. of Singapore (Singapore). Centre for Advanced 2D Materials and Graphene Research Centre; National Univ. of Singapore (Singapore). Dept. of Physics
  3. Northeastern Univ., Boston, MA (United States). Dept. of Physics
Publication Date:
Research Org.:
Temple Univ., Philadelphia, PA (United States); Northeastern Univ., Boston, MA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Energy Frontier Research Centers (EFRC) (United States). Center for the Computational Design of Functional Layered Materials (CCDM)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Center for Theoretical Sciences and the Ministry of Science and Technology of Taiwan
OSTI Identifier:
1326664
Grant/Contract Number:  
SC0012575; FG02-07ER46352; AC02-05CH11231; NRF-NRFF2013-03; MOST-104-2112-M-110-002-MY3; MOST-103-2112-M- 110-008-MY3
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Electronic structure; Topological insulators

Citation Formats

Chen, Sung-Ping, Huang, Zhi-Quan, Crisostomo, Christian P., Hsu, Chia-Hsiu, Chuang, Feng-Chuan, Lin, Hsin, and Bansil, Arun. Prediction of Quantum Anomalous Hall Insulator in half-fluorinated GaBi Honeycomb. United States: N. p., 2016. Web. doi:10.1038/srep31317.
Chen, Sung-Ping, Huang, Zhi-Quan, Crisostomo, Christian P., Hsu, Chia-Hsiu, Chuang, Feng-Chuan, Lin, Hsin, & Bansil, Arun. Prediction of Quantum Anomalous Hall Insulator in half-fluorinated GaBi Honeycomb. United States. https://doi.org/10.1038/srep31317
Chen, Sung-Ping, Huang, Zhi-Quan, Crisostomo, Christian P., Hsu, Chia-Hsiu, Chuang, Feng-Chuan, Lin, Hsin, and Bansil, Arun. Wed . "Prediction of Quantum Anomalous Hall Insulator in half-fluorinated GaBi Honeycomb". United States. https://doi.org/10.1038/srep31317. https://www.osti.gov/servlets/purl/1326664.
@article{osti_1326664,
title = {Prediction of Quantum Anomalous Hall Insulator in half-fluorinated GaBi Honeycomb},
author = {Chen, Sung-Ping and Huang, Zhi-Quan and Crisostomo, Christian P. and Hsu, Chia-Hsiu and Chuang, Feng-Chuan and Lin, Hsin and Bansil, Arun},
abstractNote = {Using first-principles electronic structure calculations, we predict half-fluorinated GaBi honeycomb under tensile strain to harbor a quantum anomalous Hall (QAH) insulator phase. We show that this QAH phase is driven by a single inversion in the band structure at the Γ point. Moreover, we have computed the electronic spectrum of a half-fluorinated GaBi nanoribbon with zigzag edges, which shows that only one edge band crosses the Fermi level within the band gap. In conclusion, our results suggest that half-fluorination of the GaBi honeycomb under tensile strain could provide a new platform for developing novel spintronics devices based on the QAH effect.},
doi = {10.1038/srep31317},
url = {https://www.osti.gov/biblio/1326664}, journal = {Scientific Reports},
issn = {2045-2322},
number = ,
volume = 6,
place = {United States},
year = {2016},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Colloquium : Topological band theory
journal, June 2016


Topological insulators and superconductors
journal, October 2011


Colloquium: Topological insulators
journal, November 2010


Anomalous Hall effect
journal, May 2010


Quantum anomalous Hall effect and related topological electronic states
journal, May 2015


Z2 Topological Order and the Quantum Spin Hall Effect
journal, September 2005


Topological field theory of time-reversal invariant insulators
journal, November 2008


Topological Crystalline Insulators
journal, March 2011


Two-dimensional Topological Crystalline Insulator Phase in Sb/Bi Planar Honeycomb with Tunable Dirac Gap
journal, January 2016


Quantum anomalous Hall effect
journal, December 2013


New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
journal, August 1980


High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
journal, March 2015


Quantized Hall Conductance in a Two-Dimensional Periodic Potential
journal, August 1982


Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors
journal, August 2006


The Complete Quantum Hall Trio
journal, April 2013


Quantized Anomalous Hall Effect in Magnetic Topological Insulators
journal, June 2010


Quantum Anomalous Hall Effect in Hg 1 y Mn y Te Quantum Wells
journal, October 2008


Magnetic topological insulators and quantum anomalous hall effect
journal, July 2015


Precise Quantization of the Anomalous Hall Effect near Zero Magnetic Field
journal, May 2015


Metal-to-insulator switching in quantum anomalous Hall states
journal, October 2015


Quantum anomalous Hall effect in graphene from Rashba and exchange effects
journal, October 2010


Quantum anomalous Hall effect in graphene coupled to skyrmions
journal, September 2015


Quantum Anomalous Hall Effect in Magnetically Doped InAs/GaSb Quantum Wells
journal, September 2014


Large-Gap Quantum Spin Hall Insulators in Tin Films
journal, September 2013


Hydrogenated ultra-thin tin films predicted as two-dimensional topological insulators
journal, November 2014


Edge state modulation of bilayer Bi nanoribbons by atom adsorption
journal, January 2014


Prediction of Near-Room-Temperature Quantum Anomalous Hall Effect on Honeycomb Materials
journal, December 2014


Quantum anomalous Hall and quantum spin-Hall phases in flattened Bi and Sb bilayers
journal, February 2015


Prediction of Large-Gap Two-Dimensional Topological Insulators Consisting of Bilayers of Group III Elements with Bi
journal, April 2014


Robust Large Gap Two-Dimensional Topological Insulators in Hydrogenated III–V Buckled Honeycombs
journal, September 2015


Predicted Growth of Two-Dimensional Topological Insulator Thin Films of III-V Compounds on Si(111) Substrate
journal, November 2015


Giant Topological Nontrivial Band Gaps in Chloridized Gallium Bismuthide
journal, January 2015


Driving a GaAs film to a large-gap topological insulator by tensile strain
journal, February 2015


Influence of the exchange screening parameter on the performance of screened hybrid functionals
journal, December 2006


Atomic-Scale Mapping of Layer-by-Layer Hydrogen Etching and Passivation of SiC(0001) Substrates
journal, May 2016


Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates
journal, December 2007


Bismuth–indium two-dimensional compounds on Si(111) surface
journal, September 2016


Synthesis of two-dimensional TlxBi1−x compounds and Archimedean encoding of their atomic structure
journal, January 2016


Inhomogeneous Electron Gas
journal, November 1964


Self-Consistent Equations Including Exchange and Correlation Effects
journal, November 1965


Ground State of the Electron Gas by a Stochastic Method
journal, August 1980


Self-interaction correction to density-functional approximations for many-electron systems
journal, May 1981


Generalized Gradient Approximation Made Simple
journal, October 1996


From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999


Ab initiomolecular dynamics for liquid metals
journal, January 1993


Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996


Special points for Brillouin-zone integrations
journal, June 1976


wannier90: A tool for obtaining maximally-localised Wannier functions
journal, May 2008


Topological invariant and the quantization of the Hall conductance
journal, April 1985


First Principles Calculation of Anomalous Hall Conductivity in Ferromagnetic bcc Fe
journal, January 2004


    Works referencing / citing this record:

    Structural and electronic properties of hydrogenated GaBi and InBi honeycomb monolayers with point defects
    journal, January 2018


    Highly-ordered wide bandgap materials for quantized anomalous Hall and magnetoelectric effects
    journal, April 2017


    Prediction of Quantum Anomalous Hall Effect in MBi and MSb (M:Ti, Zr, and Hf) Honeycombs
    journal, February 2018