High ferroelectric polarization in c-oriented BaTiO3 epitaxial thin films on SrTiO3/Si(001)

Scigaj, M.; Chao, C. H.; Gázquez, J.; Fina, I.; Moalla, R.; Saint-Girons, G.; Chisholm, M. F.; Herranz, G.; Fontcuberta, J.; Bachelet, R.; Sánchez, F.

doi:10.1063/1.4962836

Title: High ferroelectric polarization in c-oriented BaTiO₃ epitaxial thin films on SrTiO₃/Si(001)

Journal Article · Wed Sep 21 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4962836· OSTI ID:1326550

Scigaj, M. ^[1]; Chao, C. H. ^[2]; Gázquez, J. ^[3]; Fina, I. ^[3]; Moalla, R. ^[4];

^[4]; Chisholm, M. F. ^[5]; Herranz, G. ^[3]; Fontcuberta, J. ^[3]; Bachelet, R. ^[4];

^[3]

Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Barcelona (Spain); Univ. Autonoma de Barcelona, Barcelona (Spain)
Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Barcelona (Spain); National Taipei Univ. of Technology (TAIPEI TECH), Taipei (Taiwan)
Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Barcelona (Spain)
Institut des Nanotechnologies de Lyon (INL), UMR CNRS, Ecole Centrale de Lyon, Ecully Cedex (France)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

The integration of epitaxial BaTiO₃ films on silicon, combining c-orientation, surface flatness, and high ferroelectric polarization is of main interest towards its use in memory devices. This combination of properties has been only achieved so far by using yttria-stabilized zirconia buffer layers. Here, the all-perovskite BaTiO₃/LaNiO₃/SrTiO₃ heterostructure is grown monolithically on Si(001). The BaTiO₃ films are epitaxial and c-oriented and present low surface roughness and high remnant ferroelectric polarization around 6 μC/cm². Lastly, this result paves the way towards the fabrication of lead-free BaTiO₃ ferroelectric memories on silicon platforms.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1326550

Journal Information:: Applied Physics Letters, Vol. 109, Issue 12; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 21 works

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