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Title: Resonantly enhanced second-harmonic generation using III–V semiconductor all-dielectric metasurfaces

Abstract

Nonlinear optical phenomena in nanostructured materials have been challenging our perceptions of nonlinear optical processes that have been explored since the invention of lasers. For example, the ability to control optical field confinement, enhancement, and scattering almost independently allows nonlinear frequency conversion efficiencies to be enhanced by many orders of magnitude compared to bulk materials. Also, the subwavelength length scale renders phase matching issues irrelevant. Compared with plasmonic nanostructures, dielectric resonator metamaterials show great promise for enhanced nonlinear optical processes due to their larger mode volumes. Here, we present, for the first time, resonantly enhanced second-harmonic generation (SHG) using gallium arsenide (GaAs) based dielectric metasurfaces. Using arrays of cylindrical resonators we observe SHG enhancement factors as large as 10 4 relative to unpatterned GaAs. At the magnetic dipole resonance, we measure an absolute nonlinear conversion efficiency of ~2 × 10 –5 with ~3.4 GW/cm 2 pump intensity. In conclusion, the polarization properties of the SHG reveal that both bulk and surface nonlinearities play important roles in the observed nonlinear process.

Authors:
 [1];  [1];  [2];  [1];  [1];  [1];  [1];  [2];  [2];  [2];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Friedrich-Schiller-Univ. Jena, Jena (Germany)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1326369
Report Number(s):
SAND-2016-9155J
Journal ID: ISSN 1530-6984; 647439
Grant/Contract Number:
AC04-94AL85000
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 16; Journal Issue: 9; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; dielectric metasurfaces; GaAs; III−V semiconductors; monolithic; resonantly enhanced; Second-harmonic generation

Citation Formats

Liu, Sheng, Sinclair, Michael B., Saravi, Sina, Keeler, Gordon A., Yang, Yuanmu, Reno, John, Peake, Gregory M., Setzpfandt, Frank, Staude, Isabelle, Pertsch, Thomas, and Brener, Igal. Resonantly enhanced second-harmonic generation using III–V semiconductor all-dielectric metasurfaces. United States: N. p., 2016. Web. doi:10.1021/acs.nanolett.6b01816.
Liu, Sheng, Sinclair, Michael B., Saravi, Sina, Keeler, Gordon A., Yang, Yuanmu, Reno, John, Peake, Gregory M., Setzpfandt, Frank, Staude, Isabelle, Pertsch, Thomas, & Brener, Igal. Resonantly enhanced second-harmonic generation using III–V semiconductor all-dielectric metasurfaces. United States. doi:10.1021/acs.nanolett.6b01816.
Liu, Sheng, Sinclair, Michael B., Saravi, Sina, Keeler, Gordon A., Yang, Yuanmu, Reno, John, Peake, Gregory M., Setzpfandt, Frank, Staude, Isabelle, Pertsch, Thomas, and Brener, Igal. Mon . "Resonantly enhanced second-harmonic generation using III–V semiconductor all-dielectric metasurfaces". United States. doi:10.1021/acs.nanolett.6b01816. https://www.osti.gov/servlets/purl/1326369.
@article{osti_1326369,
title = {Resonantly enhanced second-harmonic generation using III–V semiconductor all-dielectric metasurfaces},
author = {Liu, Sheng and Sinclair, Michael B. and Saravi, Sina and Keeler, Gordon A. and Yang, Yuanmu and Reno, John and Peake, Gregory M. and Setzpfandt, Frank and Staude, Isabelle and Pertsch, Thomas and Brener, Igal},
abstractNote = {Nonlinear optical phenomena in nanostructured materials have been challenging our perceptions of nonlinear optical processes that have been explored since the invention of lasers. For example, the ability to control optical field confinement, enhancement, and scattering almost independently allows nonlinear frequency conversion efficiencies to be enhanced by many orders of magnitude compared to bulk materials. Also, the subwavelength length scale renders phase matching issues irrelevant. Compared with plasmonic nanostructures, dielectric resonator metamaterials show great promise for enhanced nonlinear optical processes due to their larger mode volumes. Here, we present, for the first time, resonantly enhanced second-harmonic generation (SHG) using gallium arsenide (GaAs) based dielectric metasurfaces. Using arrays of cylindrical resonators we observe SHG enhancement factors as large as 104 relative to unpatterned GaAs. At the magnetic dipole resonance, we measure an absolute nonlinear conversion efficiency of ~2 × 10–5 with ~3.4 GW/cm2 pump intensity. In conclusion, the polarization properties of the SHG reveal that both bulk and surface nonlinearities play important roles in the observed nonlinear process.},
doi = {10.1021/acs.nanolett.6b01816},
journal = {Nano Letters},
number = 9,
volume = 16,
place = {United States},
year = {Mon Aug 08 00:00:00 EDT 2016},
month = {Mon Aug 08 00:00:00 EDT 2016}
}

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