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Title: Local doping of two-dimensional materials

Abstract

This disclosure provides systems, methods, and apparatus related to locally doping two-dimensional (2D) materials. In one aspect, an assembly including a substrate, a first insulator disposed on the substrate, a second insulator disposed on the first insulator, and a 2D material disposed on the second insulator is formed. A first voltage is applied between the 2D material and the substrate. With the first voltage applied between the 2D material and the substrate, a second voltage is applied between the 2D material and a probe positioned proximate the 2D material. The second voltage between the 2D material and the probe is removed. The first voltage between the 2D material and the substrate is removed. A portion of the 2D material proximate the probe when the second voltage was applied has a different electron density compared to a remainder of the 2D material.

Inventors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1325693
Patent Number(s):
9,449,851
Application Number:
14/833,407
Assignee:
The Regents of the University of California (Oakland, CA) LBNL
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Aug 24
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Wong, Dillon, Velasco, Jr, Jairo, Ju, Long, Kahn, Salman, Lee, Juwon, Germany, Chad E., Zettl, Alexander K., Wang, Feng, and Crommie, Michael F.. Local doping of two-dimensional materials. United States: N. p., 2016. Web.
Wong, Dillon, Velasco, Jr, Jairo, Ju, Long, Kahn, Salman, Lee, Juwon, Germany, Chad E., Zettl, Alexander K., Wang, Feng, & Crommie, Michael F.. Local doping of two-dimensional materials. United States.
Wong, Dillon, Velasco, Jr, Jairo, Ju, Long, Kahn, Salman, Lee, Juwon, Germany, Chad E., Zettl, Alexander K., Wang, Feng, and Crommie, Michael F.. Tue . "Local doping of two-dimensional materials". United States. doi:. https://www.osti.gov/servlets/purl/1325693.
@article{osti_1325693,
title = {Local doping of two-dimensional materials},
author = {Wong, Dillon and Velasco, Jr, Jairo and Ju, Long and Kahn, Salman and Lee, Juwon and Germany, Chad E. and Zettl, Alexander K. and Wang, Feng and Crommie, Michael F.},
abstractNote = {This disclosure provides systems, methods, and apparatus related to locally doping two-dimensional (2D) materials. In one aspect, an assembly including a substrate, a first insulator disposed on the substrate, a second insulator disposed on the first insulator, and a 2D material disposed on the second insulator is formed. A first voltage is applied between the 2D material and the substrate. With the first voltage applied between the 2D material and the substrate, a second voltage is applied between the 2D material and a probe positioned proximate the 2D material. The second voltage between the 2D material and the probe is removed. The first voltage between the 2D material and the substrate is removed. A portion of the 2D material proximate the probe when the second voltage was applied has a different electron density compared to a remainder of the 2D material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 20 00:00:00 EDT 2016},
month = {Tue Sep 20 00:00:00 EDT 2016}
}

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Works referenced in this record:

Boron nitride substrates for high-quality graphene electronics
journal, August 2010

  • Dean, C. R.; Young, A. F.; Meric, I.
  • Nature Nanotechnology, Vol. 5, Issue 10, p. 722-726
  • DOI: 10.1038/nnano.2010.172