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Title: Piezoresistive boron doped diamond nanowire

Abstract

A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.

Inventors:
;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1324680
Patent Number(s):
9,441,940
Application Number:
14/601,908
Assignee:
UCHICAGO ARGONNE, LLC (Chicago, IL) ANL
DOE Contract Number:
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Jan 21
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Sumant, Anirudha V., and Wang, Xinpeng. Piezoresistive boron doped diamond nanowire. United States: N. p., 2016. Web.
Sumant, Anirudha V., & Wang, Xinpeng. Piezoresistive boron doped diamond nanowire. United States.
Sumant, Anirudha V., and Wang, Xinpeng. Tue . "Piezoresistive boron doped diamond nanowire". United States. doi:. https://www.osti.gov/servlets/purl/1324680.
@article{osti_1324680,
title = {Piezoresistive boron doped diamond nanowire},
author = {Sumant, Anirudha V. and Wang, Xinpeng},
abstractNote = {A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 13 00:00:00 EDT 2016},
month = {Tue Sep 13 00:00:00 EDT 2016}
}

Patent:

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