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Title: Variability of structural and electronic properties of bulk and monolayer Si 2 Te 3

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1324366
Grant/Contract Number:
FG02-09ER46554
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 11; Related Information: CHORUS Timestamp: 2016-12-22 00:13:04; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Shen, X., Puzyrev, Y. S., Combs, C., and Pantelides, S. T. Variability of structural and electronic properties of bulk and monolayer Si 2 Te 3. United States: N. p., 2016. Web. doi:10.1063/1.4962826.
Shen, X., Puzyrev, Y. S., Combs, C., & Pantelides, S. T. Variability of structural and electronic properties of bulk and monolayer Si 2 Te 3. United States. doi:10.1063/1.4962826.
Shen, X., Puzyrev, Y. S., Combs, C., and Pantelides, S. T. 2016. "Variability of structural and electronic properties of bulk and monolayer Si 2 Te 3". United States. doi:10.1063/1.4962826.
@article{osti_1324366,
title = {Variability of structural and electronic properties of bulk and monolayer Si 2 Te 3},
author = {Shen, X. and Puzyrev, Y. S. and Combs, C. and Pantelides, S. T.},
abstractNote = {},
doi = {10.1063/1.4962826},
journal = {Applied Physics Letters},
number = 11,
volume = 109,
place = {United States},
year = 2016,
month = 9
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4962826

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