4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth
Journal Article
·
· Journal of Crystal Growth
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- 12-3834
- OSTI ID:
- 1324352
- Journal Information:
- Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 448 Journal Issue: C; ISSN 0022-0248
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- Netherlands
- Language:
- English
Cited by: 10 works
Citation information provided by
Web of Science
Web of Science
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