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Title: Isotropic plasma etching of Ge Si and SiN x films

Abstract

This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF 3 and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiN x are described with etch rate reductions achieved by adjusting plasma chemistry with O 2. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiN x etch rates while retarding Ge etching.

Authors:
 [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1323884
Report Number(s):
SAND-2016-4884J
Journal ID: ISSN 2166-2746; 640682; TRN: US1700144
Grant/Contract Number:
AC04-94AL85000
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
Additional Journal Information:
Journal Volume: 34; Journal Issue: 5; Journal ID: ISSN 2166-2746
Publisher:
American Vacuum Society/AIP
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Germanium; Plasma etching; Silicon

Citation Formats

Henry, Michael David, and Douglas, Erica Ann. Isotropic plasma etching of Ge Si and SiNx films. United States: N. p., 2016. Web. doi:10.1116/1.4961944.
Henry, Michael David, & Douglas, Erica Ann. Isotropic plasma etching of Ge Si and SiNx films. United States. doi:10.1116/1.4961944.
Henry, Michael David, and Douglas, Erica Ann. 2016. "Isotropic plasma etching of Ge Si and SiNx films". United States. doi:10.1116/1.4961944. https://www.osti.gov/servlets/purl/1323884.
@article{osti_1323884,
title = {Isotropic plasma etching of Ge Si and SiNx films},
author = {Henry, Michael David and Douglas, Erica Ann},
abstractNote = {This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF3 and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiNx are described with etch rate reductions achieved by adjusting plasma chemistry with O2. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiNx etch rates while retarding Ge etching.},
doi = {10.1116/1.4961944},
journal = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},
number = 5,
volume = 34,
place = {United States},
year = 2016,
month = 8
}

Journal Article:
Free Publicly Available Full Text
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