Incomplete elimination of precursor ligands during atomic layer deposition of zinc-oxide, tin-oxide, and zinc-tin-oxide

Mackus, Adriaan J. M.; MacIsaac, Callisto; Kim, Woo -Hee; Bent, Stacey F.

doi:10.1063/1.4961459

Title: Incomplete elimination of precursor ligands during atomic layer deposition of zinc-oxide, tin-oxide, and zinc-tin-oxide

Journal Article · Thu Sep 08 00:00:00 EDT 2016 · Journal of Chemical Physics

DOI:https://doi.org/10.1063/1.4961459· OSTI ID:1464924

Mackus, Adriaan J. M. ^[1]; MacIsaac, Callisto ^[1]; Kim, Woo -Hee ^[1]; Bent, Stacey F. ^[1]

Stanford Univ., Stanford, CA (United States). Dept. of Chemical Engineering

For atomic layer deposition (ALD) of doped, ternary, and quaternary materials achieved by combining multiple binary ALD processes, it is often difficult to correlate the material properties and growth characteristics with the process parameters due to a limited understanding of the underlying surface chemistry. In this work, in situ Fourier transform infrared (FTIR) spectroscopy was employed during ALD of zinc-oxide, tin-oxide, and zinc-tin-oxide (ZTO) with the precursors diethylzinc (DEZ), tetrakis(dimethylamino)tin (TDMASn), and H₂O. The main aim was to investigate the molecular basis for the nucleation delay during ALD of ZTO, observed when ZnO ALD is carried out after SnO₂ ALD. Gas-phase FTIR spectroscopy showed that dimethylamine, the main reaction product of the SnO₂ ALD process, is released not only during SnO₂ ALD but also when depositing ZnO after SnO₂, indicating incomplete removal of the ligands of the TDMASn precursor from the surface. Transmission FTIR spectroscopy performed during ALD on SiO₂ powder revealed that a significant fraction of the ligands persist during both SnO₂ and ZnO ALD. These observations provide experimental evidence for a recently proposed mechanism, based on theoretical calculations, suggesting that the elimination of precursor ligands is often not complete. In addition, it was found that the removal of precursor ligands by H₂O exposure is even less effective when ZnO ALD is carried out after SnO₂ ALD, which likely causes the nucleation delay in ZnO ALD during the deposition of ZTO. Furthermore, the underlying mechanisms and the consequences of the incomplete elimination of precursor ligands are discussed.

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Research Organization:: Stanford Univ., Stanford, CA (United States). Dept. of Chemical Engineering

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: SC0004782

OSTI ID:: 1464924

Alternate ID(s):: OSTI ID: 1322424

Journal Information:: Journal of Chemical Physics, Vol. 146, Issue 5; ISSN 0021-9606

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 59 works

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