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Title: Ultrahigh sensitivity of anomalous Hall effect sensor based on Cr-doped Bi 2Te 3 topological insulator thin films

Abstract

Anomalous Hall effect (AHE) was recently discovered in magnetic element-doped topological insulators (TIs), which promises low power consumption and high efficiency spintronics and electronics. This discovery broadens the family of Hall sensors. In this paper, AHE sensors based on Cr-doped Bi 2Te 3 topological insulator thin films are studied with two thicknesses (15 and 65 nm). It is found, in both cases, that ultrahigh Hall sensitivity can be obtained in Cr-doped Bi 2Te 3. Hall sensitivity reaches 1666 Ω/T in the sensor with the 15 nm TI thin film, which is higher than that of the conventional semiconductor HE sensor. The AHE of 65 nm sensors is even stronger, which causes the sensitivity increasing to 2620 Ω/T. Furthermore, after comparing Cr-doped Bi 2Te 3 with the previously studied Mn-doped Bi 2Te 3 TI Hall sensor, the sensitivity of the present AHE sensor shows about 60 times higher in 65 nm sensors. Furthermore, the implementation of AHE sensors based on a magnetic-doped TI thin film indicates that the TIs are good candidates for ultrasensitive AHE sensors.

Authors:
 [1];  [1];  [2];  [1]
  1. Iowa State Univ., Ames, IA (United States)
  2. Ames Lab. and Iowa State Univ., Ames, IA (United States)
Publication Date:
Research Org.:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1321967
Report Number(s):
IS-J-9028
Journal ID: ISSN 0018-9464
Grant/Contract Number:  
AC02-07CH11358
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
IEEE Transactions on Magnetics
Additional Journal Information:
Journal Volume: 52; Journal Issue: 7; Journal ID: ISSN 0018-9464
Publisher:
Institute of Electrical and Electronics Engineers. Magnetics Group
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; sensitivity; Anomalous Hall effect sensor; topological insulators; thin films; temperature sensors; Hall effect; conductivity; charge carrier density; temperature measurement; magnetic hysteresis

Citation Formats

Ni, Y., Zhang, Z., Nlebedim, I. C., and Jiles, D. C. Ultrahigh sensitivity of anomalous Hall effect sensor based on Cr-doped Bi2Te3 topological insulator thin films. United States: N. p., 2016. Web. doi:10.1109/TMAG.2016.2519512.
Ni, Y., Zhang, Z., Nlebedim, I. C., & Jiles, D. C. Ultrahigh sensitivity of anomalous Hall effect sensor based on Cr-doped Bi2Te3 topological insulator thin films. United States. doi:10.1109/TMAG.2016.2519512.
Ni, Y., Zhang, Z., Nlebedim, I. C., and Jiles, D. C. Fri . "Ultrahigh sensitivity of anomalous Hall effect sensor based on Cr-doped Bi2Te3 topological insulator thin films". United States. doi:10.1109/TMAG.2016.2519512. https://www.osti.gov/servlets/purl/1321967.
@article{osti_1321967,
title = {Ultrahigh sensitivity of anomalous Hall effect sensor based on Cr-doped Bi2Te3 topological insulator thin films},
author = {Ni, Y. and Zhang, Z. and Nlebedim, I. C. and Jiles, D. C.},
abstractNote = {Anomalous Hall effect (AHE) was recently discovered in magnetic element-doped topological insulators (TIs), which promises low power consumption and high efficiency spintronics and electronics. This discovery broadens the family of Hall sensors. In this paper, AHE sensors based on Cr-doped Bi2Te3 topological insulator thin films are studied with two thicknesses (15 and 65 nm). It is found, in both cases, that ultrahigh Hall sensitivity can be obtained in Cr-doped Bi2Te3. Hall sensitivity reaches 1666 Ω/T in the sensor with the 15 nm TI thin film, which is higher than that of the conventional semiconductor HE sensor. The AHE of 65 nm sensors is even stronger, which causes the sensitivity increasing to 2620 Ω/T. Furthermore, after comparing Cr-doped Bi2Te3 with the previously studied Mn-doped Bi2Te3 TI Hall sensor, the sensitivity of the present AHE sensor shows about 60 times higher in 65 nm sensors. Furthermore, the implementation of AHE sensors based on a magnetic-doped TI thin film indicates that the TIs are good candidates for ultrasensitive AHE sensors.},
doi = {10.1109/TMAG.2016.2519512},
journal = {IEEE Transactions on Magnetics},
number = 7,
volume = 52,
place = {United States},
year = {Fri Jul 01 00:00:00 EDT 2016},
month = {Fri Jul 01 00:00:00 EDT 2016}
}

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