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Title: Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy

Authors:
; ORCiD logo; ORCiD logo; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1321035
Grant/Contract Number:
SC0012375
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 10; Related Information: CHORUS Timestamp: 2016-12-22 00:01:54; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Brahlek, Matthew, Zhang, Lei, Zhang, Hai-Tian, Lapano, Jason, Dedon, Liv R., Martin, Lane W., and Engel-Herbert, Roman. Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy. United States: N. p., 2016. Web. doi:10.1063/1.4962388.
Brahlek, Matthew, Zhang, Lei, Zhang, Hai-Tian, Lapano, Jason, Dedon, Liv R., Martin, Lane W., & Engel-Herbert, Roman. Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy. United States. doi:10.1063/1.4962388.
Brahlek, Matthew, Zhang, Lei, Zhang, Hai-Tian, Lapano, Jason, Dedon, Liv R., Martin, Lane W., and Engel-Herbert, Roman. 2016. "Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy". United States. doi:10.1063/1.4962388.
@article{osti_1321035,
title = {Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy},
author = {Brahlek, Matthew and Zhang, Lei and Zhang, Hai-Tian and Lapano, Jason and Dedon, Liv R. and Martin, Lane W. and Engel-Herbert, Roman},
abstractNote = {},
doi = {10.1063/1.4962388},
journal = {Applied Physics Letters},
number = 10,
volume = 109,
place = {United States},
year = 2016,
month = 9
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4962388

Citation Metrics:
Cited by: 3works
Citation information provided by
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  • Requisite to growing stoichiometric perovskite thin films of the solid-solution A′{sub 1-x}A{sub x}BO{sub 3} by hybrid molecular beam epitaxy is understanding how the growth conditions interpolate between the end members A'BO{sub 3} and ABO{sub 3}, which can be grown in a self-regulated fashion, but under different conditions. Using the example of La{sub 1-x}Sr{sub x}VO{sub 3}, the two-dimensional growth parameter space that is spanned by the flux of the metal-organic precursor vanadium oxytriisopropoxide and composition, x, was mapped out. The evolution of the adsorption-controlled growth window was obtained using a combination of X-ray diffraction, atomic force microscopy, reflection high-energy electron-diffraction (RHEED),more » and Rutherford backscattering spectroscopy. It is found that the stoichiometric growth conditions can be mapped out quickly with a single calibration sample using RHEED. Once stoichiometric conditions have been identified, the out-of-plane lattice parameter can be utilized to precisely determine the composition x. This strategy enables the identification of growth conditions that allow the deposition of stoichiometric perovskite oxide films with random A-site cation mixing, which is relevant to a large number of perovskite materials with interesting properties, e.g., high-temperature superconductivity and colossal magnetoresistance, that emerge in solid solution A′{sub 1-x}A{sub x}BO{sub 3}.« less
  • By means of the state-of-the-art reactive oxide molecular beam epitaxy, we synthesized (001)- and (111)-orientated polar LaNiO{sub 3} thin films. In order to avoid the interfacial reconstructions induced by polar catastrophe, screening metallic Nb-doped SrTiO{sub 3} and iso-polarity LaAlO{sub 3} substrates were chosen to achieve high-quality (001)-orientated films in a layer-by-layer growth mode. For largely polar (111)-orientated films, we showed that iso-polarity LaAlO{sub 3} (111) substrate was more suitable than Nb-doped SrTiO{sub 3}. In situ reflection high-energy electron diffraction, ex situ high-resolution X-ray diffraction, and atomic force microscopy were used to characterize these films. Our results show that special attentionsmore » need to be paid to grow high-quality oxide films with polar orientations, which can prompt the explorations of all-oxide electronics and artificial interfacial engineering to pursue intriguing emergent physics like proposed interfacial superconductivity and topological phases in LaNiO{sub 3} based superlattices.« less
  • Indium incorporation into wurtzite (0001)-oriented In{sub x}Al{sub y}Ga{sub 1-x-y}N layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temperature (565-635 deg. C) and the AlN mole fraction (0.01<y<0.27). The layer stoichiometry was determined by Rutherford backscattering spectrometry (RBS). RBS shows that indium incorporation decreased continuously with increasing growth temperature due to thermally enhanced dissociation of In-N bonds and for increasing AlN mole fractions. High resolution x-ray diffraction and transmission electron microscopy (TEM) measurements did not show evidence of phase separation. The mosaicity of the quaternary layers was found to be mainly determined by themore » growth temperature and independent on alloy composition within the range studied. However, depending on the AlN mole fraction, nanometer-sized composition fluctuations were detected by TEM. Photoluminescence spectra showed a single broad emission at room temperature, with energy and bandwidth S- and W-shaped temperature dependences typical of exciton localization by alloy inhomogeneities. Cathodoluminescence measurements demonstrated that the alloy inhomogeneities, responsible of exciton localization, occur on a lateral length scale below 150 nm, which is corroborated by TEM.« less
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