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Title: Single-Event Characterization of the 28 nm Xilinx Kintex-7 Field-Programmable Gate Array under Heavy-Ion Irradiation.

Abstract

Abstract not provided.

Authors:
; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1319638
Report Number(s):
SAND2014-16179C
533235
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the Nuclear and Space Radiation Effects Conference held July 14-18, 2014 in Paris, France.
Country of Publication:
United States
Language:
English

Citation Formats

Lee, David S., Wirthlin, Michael, Swift, Gary, and Le, Anthony. Single-Event Characterization of the 28 nm Xilinx Kintex-7 Field-Programmable Gate Array under Heavy-Ion Irradiation.. United States: N. p., 2014. Web. doi:10.1109/REDW.2014.7004595.
Lee, David S., Wirthlin, Michael, Swift, Gary, & Le, Anthony. Single-Event Characterization of the 28 nm Xilinx Kintex-7 Field-Programmable Gate Array under Heavy-Ion Irradiation.. United States. doi:10.1109/REDW.2014.7004595.
Lee, David S., Wirthlin, Michael, Swift, Gary, and Le, Anthony. Tue . "Single-Event Characterization of the 28 nm Xilinx Kintex-7 Field-Programmable Gate Array under Heavy-Ion Irradiation.". United States. doi:10.1109/REDW.2014.7004595. https://www.osti.gov/servlets/purl/1319638.
@article{osti_1319638,
title = {Single-Event Characterization of the 28 nm Xilinx Kintex-7 Field-Programmable Gate Array under Heavy-Ion Irradiation.},
author = {Lee, David S. and Wirthlin, Michael and Swift, Gary and Le, Anthony},
abstractNote = {Abstract not provided.},
doi = {10.1109/REDW.2014.7004595},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 01 00:00:00 EDT 2014},
month = {Tue Jul 01 00:00:00 EDT 2014}
}

Conference:
Other availability
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