Chemical vapor deposition of epitaxial silicon-germanium from silane and germane. 2: In situ boron, arsenic, and phosphorus doping
- Massachusetts Inst. of Tech., Cambridge, MA (United States). Microsystems Technology Labs.
The authors have studied in situ boron, arsenic, and phosphorus doping of epitaxial silicon and Si{sub 1{minus}x}Ge{sub x} layers grown on silicon substrates at 620 C and at very low pressure ({approximately}7 mTorr) with silane, germane, and diborane, and arsine and phosphine diluted in silane as gas sources. Structural quality was characterized by cross-sectional transmission electron microscopy and the germanium and dopant depth profiles were probed by secondary ion mass spectrometry. The results confirmed tat strained Si/Si{sub 1{minus}x}Ge{sub x}/Si heterostructures with 13 atom percent germanium doped to 2{times}10{sup 20} boron atom/cm{sup 3} and 5{times}10{sup 19} arsenic atom/cm{sup 3} have been achieved. Phosphorus doped Si{sub 1{minus}x}Ge{sub x}/Si multilayer structures with highly perfect surface Si{sub 1{minus}x}Ge{sub x} and silicon layers were also obtained. The addition of arsine and phosphine were found to severely degrade the growth rates of both silicon and Si{sub 1{minus}x}Ge{sub x} layers. Germanium incorporation appeared to enhance the n-type doping process by compensating the depressed growth rate resulted for surface poisoning and by improving the abruptness of dopant profiles. However, deposition of Si{sub 1{minus}x}Ge{sub x} was not greatly affected by boron doping.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 131782
- Journal Information:
- Journal of the Electrochemical Society, Vol. 142, Issue 10; Other Information: PBD: Oct 1995
- Country of Publication:
- United States
- Language:
- English
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