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Title: Improved Performance of Electroplated CZTS Thin-Film Solar Cells with Bifacial Configuration

Abstract

Annealing in S vapor greatly improves the performance of electroplated Cu2ZnSnS4 (CZTS) solar cells based on the bifacial configuration of Al-doped ZnO (AZO, front contact)/ZnO/CdS/CZTS/indium tin oxide (ITO, back contact), as compared to H2S annealing in our previous works. S-vapor annealing does not cause severe damage to the conductivity of the ITO back contact. The highest device efficiency of 5.8% was reached under 1 sun illumination from the AZO side. The well-preformed devices based on the ITO back contact demonstrate smaller series resistances and better fill factors, as compared to our substrate-type devices using Mo back contacts. An interfacial reaction at the ITO back contact has been revealed in experiments, which contributes to the formation of SnO2-enriched interfacial layer and diffusion of In from ITO into CZTS through the Sn sites. Incorporation of In does not significantly change the optical and structural properties or the grain size of CZTS absorbers.

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [3];  [1]
  1. Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo Ohio 43606 United States
  2. Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo Ohio 43606 United States; National Renewable Energy Laboratory, Golden CO 80401 United States
  3. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, The Chinese Academy of Sciences, Shanghai 800081 China
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
National Science Foundation (NSF)
OSTI Identifier:
1313610
Report Number(s):
NREL/JA-5K00-66830
Journal ID: ISSN 1864-5631
DOE Contract Number:
AC36-08GO28308
Resource Type:
Journal Article
Resource Relation:
Journal Name: ChemSusChem; Journal Volume: 9; Journal Issue: 16
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; bifacial device; diffusion; indium tin oxide; kesterite; vapor annealing

Citation Formats

Ge, Jie, Yu, Yue, Ke, Weijun, Li, Jian, Tan, Xinxuan, Wang, Zhiwei, Chu, Junhao, and Yan, Yanfa. Improved Performance of Electroplated CZTS Thin-Film Solar Cells with Bifacial Configuration. United States: N. p., 2016. Web. doi:10.1002/cssc.201600440.
Ge, Jie, Yu, Yue, Ke, Weijun, Li, Jian, Tan, Xinxuan, Wang, Zhiwei, Chu, Junhao, & Yan, Yanfa. Improved Performance of Electroplated CZTS Thin-Film Solar Cells with Bifacial Configuration. United States. doi:10.1002/cssc.201600440.
Ge, Jie, Yu, Yue, Ke, Weijun, Li, Jian, Tan, Xinxuan, Wang, Zhiwei, Chu, Junhao, and Yan, Yanfa. Mon . "Improved Performance of Electroplated CZTS Thin-Film Solar Cells with Bifacial Configuration". United States. doi:10.1002/cssc.201600440.
@article{osti_1313610,
title = {Improved Performance of Electroplated CZTS Thin-Film Solar Cells with Bifacial Configuration},
author = {Ge, Jie and Yu, Yue and Ke, Weijun and Li, Jian and Tan, Xinxuan and Wang, Zhiwei and Chu, Junhao and Yan, Yanfa},
abstractNote = {Annealing in S vapor greatly improves the performance of electroplated Cu2ZnSnS4 (CZTS) solar cells based on the bifacial configuration of Al-doped ZnO (AZO, front contact)/ZnO/CdS/CZTS/indium tin oxide (ITO, back contact), as compared to H2S annealing in our previous works. S-vapor annealing does not cause severe damage to the conductivity of the ITO back contact. The highest device efficiency of 5.8% was reached under 1 sun illumination from the AZO side. The well-preformed devices based on the ITO back contact demonstrate smaller series resistances and better fill factors, as compared to our substrate-type devices using Mo back contacts. An interfacial reaction at the ITO back contact has been revealed in experiments, which contributes to the formation of SnO2-enriched interfacial layer and diffusion of In from ITO into CZTS through the Sn sites. Incorporation of In does not significantly change the optical and structural properties or the grain size of CZTS absorbers.},
doi = {10.1002/cssc.201600440},
journal = {ChemSusChem},
number = 16,
volume = 9,
place = {United States},
year = {Mon Jul 11 00:00:00 EDT 2016},
month = {Mon Jul 11 00:00:00 EDT 2016}
}