skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Laser damage mechanisms in conductive widegap semiconductor films

Abstract

Here, laser damage mechanisms of two conductive wide-bandgap semiconductor films - indium tin oxide (ITO) and silicon doped GaN (Si:GaN) were studied via microscopy, spectroscopy, photoluminescence (PL), and elemental analysis. Nanosecond laser pulse exposures with a laser photon energy (1.03 eV, 1064 nm) smaller than the conductive films bandgaps were applied and radically different film damage morphologies were produced. The laser damaged ITO film exhibited deterministic features of thermal degradation. In contrast, laser damage in the Si:GaN film resulted in highly localized eruptions originating at interfaces. For ITO, thermally driven damage was related to free carrier absorption and, for GaN, carbon complexes were proposed as potential damage precursors or markers.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [2];  [3];  [1];  [1]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  2. Cornell Univ., Ithaca, NY (United States)
  3. Univ. of Rochester, Rochester, NY (United States)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1313552
Report Number(s):
LLNL-JRNL-694293
Journal ID: ISSN 1094-4087; OPEXFF
Grant/Contract Number:
AC52-07NA27344
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Optics Express
Additional Journal Information:
Journal Volume: 24; Journal Issue: 16; Journal ID: ISSN 1094-4087
Publisher:
Optical Society of America (OSA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; lasers and laser optics; laser materials; laser damage; optics at surfaces

Citation Formats

Yoo, Jae-Hyuck, Menor, Marlon G., Adams, John J., Raman, Rajesh N., Lee, Jonathan R. I., Olson, Tammy Y., Shen, Nan, Suh, Joonki, Demos, Stavros G., Bude, Jeff, and Elhadj, Selim. Laser damage mechanisms in conductive widegap semiconductor films. United States: N. p., 2016. Web. doi:10.1364/OE.24.017616.
Yoo, Jae-Hyuck, Menor, Marlon G., Adams, John J., Raman, Rajesh N., Lee, Jonathan R. I., Olson, Tammy Y., Shen, Nan, Suh, Joonki, Demos, Stavros G., Bude, Jeff, & Elhadj, Selim. Laser damage mechanisms in conductive widegap semiconductor films. United States. doi:10.1364/OE.24.017616.
Yoo, Jae-Hyuck, Menor, Marlon G., Adams, John J., Raman, Rajesh N., Lee, Jonathan R. I., Olson, Tammy Y., Shen, Nan, Suh, Joonki, Demos, Stavros G., Bude, Jeff, and Elhadj, Selim. Mon . "Laser damage mechanisms in conductive widegap semiconductor films". United States. doi:10.1364/OE.24.017616. https://www.osti.gov/servlets/purl/1313552.
@article{osti_1313552,
title = {Laser damage mechanisms in conductive widegap semiconductor films},
author = {Yoo, Jae-Hyuck and Menor, Marlon G. and Adams, John J. and Raman, Rajesh N. and Lee, Jonathan R. I. and Olson, Tammy Y. and Shen, Nan and Suh, Joonki and Demos, Stavros G. and Bude, Jeff and Elhadj, Selim},
abstractNote = {Here, laser damage mechanisms of two conductive wide-bandgap semiconductor films - indium tin oxide (ITO) and silicon doped GaN (Si:GaN) were studied via microscopy, spectroscopy, photoluminescence (PL), and elemental analysis. Nanosecond laser pulse exposures with a laser photon energy (1.03 eV, 1064 nm) smaller than the conductive films bandgaps were applied and radically different film damage morphologies were produced. The laser damaged ITO film exhibited deterministic features of thermal degradation. In contrast, laser damage in the Si:GaN film resulted in highly localized eruptions originating at interfaces. For ITO, thermally driven damage was related to free carrier absorption and, for GaN, carbon complexes were proposed as potential damage precursors or markers.},
doi = {10.1364/OE.24.017616},
journal = {Optics Express},
number = 16,
volume = 24,
place = {United States},
year = {Mon Jul 25 00:00:00 EDT 2016},
month = {Mon Jul 25 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 7works
Citation information provided by
Web of Science

Save / Share:
  • Optical damage thresholds of submicron-thick, electron beam deposited HfO{sub 2} and SiO{sub 2} films on BK-7 substrates have been measured by monitoring the emission of neutral constituents during excitation with time-delayed pairs of 70-ps laser pulses at a wavelength of 1064 nm. The dependence of the optical damage threshold on time delay provides evidence of the optical damage mechanism. For SiO{sub 2}, linear absorption is the mechanism for energy deposition into the films by the laser beams. The data for HfO{sub 2} are less definitive, although linear absorption is the most likely damage mechanism. The behavior of the single-layer filmsmore » is compared to multilayer HfO{sub 2}-SiO{sub 2} high-reflector coatings, for which a conditioning'' effect causes an increased optical damage threshold due to multiple pulse laser excitation at fluences below the single-pulse optical damage threshold.« less
  • Amorphous silicon (a-Si) based thin film solar cell grown on flexible stainless steel substrate is one of the most promising energy conversion devices in the future. This type of solar cell uses a transparent conductive oxide (TCO) film as top electrode. It has been a widely accepted opinion that the radio frequency sputtering deposition of the TCO film produces a higher yield than direct current sputtering, and the reason is not clear. Here we show that the damage to the solar cell during the sputtering process is caused by a reverse bias applied to the n-i-p junction. This reverse biasmore » is related to the characteristics of plasma discharge. The mechanism we reveal may significantly affect the solar cell process.« less
  • Transparent conductive coatings of In/sub 1.9/Sn/sub 0.1/O/sub 3/ have been made on fused silica which exhibit damage thresholds of 2.2 and 3.1 J/cm/sup 2/ for 0.15- and 1-nsec Nd : glass laser pulses, respectively. The coatings were made by reactive sputtering in an rf diode system. Coating absorption detected spectrophotometrically was less than 1% (approx.300 cm/sup -1/) near 1064 nm for coatings with in-plane resistivities of 0.017 and 0.55 ..cap omega.. cm. An important potential application for such coatings is as the electrode for electro-optic shutters based on the longitudinal Pockels effect which are used in high-energy laser systems.
  • Highly conductive ruthenium oxide (RuO{sub 2}) has been epitaxially grown on LaAlO{sub 3} substrates by pulsed laser deposition. The RuO{sub 2} film is ({ital h}00) oriented normal to the substrate surface. The heteroepitaxial growth of RuO{sub 2} on LaAlO{sub 3} is demonstrated by the strong in-plane orientation of thin films with respect to the major axes of the substrate. High crystallinity of RuO{sub 2} thin films is also determined from Rutherford backscattering channeling measurements. Electrical measurements on the RuO{sub 2} thin films demonstrate a quite low room-temperature resistivity of 35{plus_minus}2 {mu}{Omega} cm at deposition temperatures of above 500 {degree}C. {copyright}more » {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.« less
  • RuO{sub 2} thin films have been produced on silicon-based substrates by {ital in situ} pulsed laser deposition for the first time. The electrical properties, the surface characteristics, the crystalline structure, and the film-substrate interface of deposited samples have been investigated by 4-probe resistance versus temperature technique, scanning electron microscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy, respectively. The films show good electrical properties. The RuO{sub 2}-substrate interface is very thin ({approx}3 nm), since not degraded by any annealing process. These two characteristics render our films suitable to be used as electrodes in PZT-based capacitors.{copyright} {ital 1997 Materials Researchmore » Society.}« less