Laser damage mechanisms in conductive widegap semiconductor films
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Cornell Univ., Ithaca, NY (United States)
- Univ. of Rochester, Rochester, NY (United States)
Here, laser damage mechanisms of two conductive wide-bandgap semiconductor films - indium tin oxide (ITO) and silicon doped GaN (Si:GaN) were studied via microscopy, spectroscopy, photoluminescence (PL), and elemental analysis. Nanosecond laser pulse exposures with a laser photon energy (1.03 eV, 1064 nm) smaller than the conductive films bandgaps were applied and radically different film damage morphologies were produced. The laser damaged ITO film exhibited deterministic features of thermal degradation. In contrast, laser damage in the Si:GaN film resulted in highly localized eruptions originating at interfaces. For ITO, thermally driven damage was related to free carrier absorption and, for GaN, carbon complexes were proposed as potential damage precursors or markers.
- Research Organization:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- AC52-07NA27344
- OSTI ID:
- 1313552
- Report Number(s):
- LLNL-JRNL-694293; OPEXFF
- Journal Information:
- Optics Express, Vol. 24, Issue 16; ISSN 1094-4087
- Publisher:
- Optical Society of America (OSA)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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