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Title: Nanoforging Single Layer MoSe 2 Through Defect Engineering with Focused Helium Ion Beams

Abstract

Development of devices and structures based on the layered 2D materials critically hinges on the capability to induce, control, and tailor the electronic, transport, and optoelectronic properties via defect engineering, much like doping strategies have enabled semiconductor electronics and forging enabled introduction of iron age. Here, we demonstrate the use of a scanning helium ion microscope (HIM) for tailoring the functionality of single layer MoSe 2 locally, and decipher associated mechanisms at atomic level. We demonstrate He + beam bombardment that locally creates vacancies, shifts the Fermi energy landscape and thereby increases the Young s modulus of elasticity. Furthermore, we observe for the first time, an increase in the B-exciton photoluminescence signal from the nanoforged regions at room temperature. In conclusion, the approach for precise defect engineering demonstrated here opens opportunities for creating functional 2D optoelectronic devices with a wide range of customizable properties that include operating in the visible region.

Authors:
 [1];  [2];  [3];  [4];  [2];  [2];  [2];  [3];  [5];  [3];  [4];  [2];  [3];  [3]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering; Procter and Gamble Company Winton Hill Business Center (WBHC), Cincinnati, OH (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Inst. for Functional Imaging of Materials
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Univ. of Tennessee, Knoxville, TN (United States). Dept. of Materials Science and Engineering
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Inst. for Functional Imaging of Materials; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Computer Science & Mathematics Division
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1311234
Grant/Contract Number:
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Iberi, Vighter, Liang, Liangbo, Ievlev, Anton V., Stanford, Michael G., Lin, Ming-Wei, Li, Xufan, Mahjouri-Samani, Masoud, Jesse, Stephen, Sumpter, Bobby G., Kalinin, Sergei V., Joy, David C., Xiao, Kai, Belianinov, Alex, and Ovchinnikova, Olga S. Nanoforging Single Layer MoSe2 Through Defect Engineering with Focused Helium Ion Beams. United States: N. p., 2016. Web. doi:10.1038/srep30481.
Iberi, Vighter, Liang, Liangbo, Ievlev, Anton V., Stanford, Michael G., Lin, Ming-Wei, Li, Xufan, Mahjouri-Samani, Masoud, Jesse, Stephen, Sumpter, Bobby G., Kalinin, Sergei V., Joy, David C., Xiao, Kai, Belianinov, Alex, & Ovchinnikova, Olga S. Nanoforging Single Layer MoSe2 Through Defect Engineering with Focused Helium Ion Beams. United States. doi:10.1038/srep30481.
Iberi, Vighter, Liang, Liangbo, Ievlev, Anton V., Stanford, Michael G., Lin, Ming-Wei, Li, Xufan, Mahjouri-Samani, Masoud, Jesse, Stephen, Sumpter, Bobby G., Kalinin, Sergei V., Joy, David C., Xiao, Kai, Belianinov, Alex, and Ovchinnikova, Olga S. 2016. "Nanoforging Single Layer MoSe2 Through Defect Engineering with Focused Helium Ion Beams". United States. doi:10.1038/srep30481. https://www.osti.gov/servlets/purl/1311234.
@article{osti_1311234,
title = {Nanoforging Single Layer MoSe2 Through Defect Engineering with Focused Helium Ion Beams},
author = {Iberi, Vighter and Liang, Liangbo and Ievlev, Anton V. and Stanford, Michael G. and Lin, Ming-Wei and Li, Xufan and Mahjouri-Samani, Masoud and Jesse, Stephen and Sumpter, Bobby G. and Kalinin, Sergei V. and Joy, David C. and Xiao, Kai and Belianinov, Alex and Ovchinnikova, Olga S.},
abstractNote = {Development of devices and structures based on the layered 2D materials critically hinges on the capability to induce, control, and tailor the electronic, transport, and optoelectronic properties via defect engineering, much like doping strategies have enabled semiconductor electronics and forging enabled introduction of iron age. Here, we demonstrate the use of a scanning helium ion microscope (HIM) for tailoring the functionality of single layer MoSe2 locally, and decipher associated mechanisms at atomic level. We demonstrate He+ beam bombardment that locally creates vacancies, shifts the Fermi energy landscape and thereby increases the Young s modulus of elasticity. Furthermore, we observe for the first time, an increase in the B-exciton photoluminescence signal from the nanoforged regions at room temperature. In conclusion, the approach for precise defect engineering demonstrated here opens opportunities for creating functional 2D optoelectronic devices with a wide range of customizable properties that include operating in the visible region.},
doi = {10.1038/srep30481},
journal = {Scientific Reports},
number = ,
volume = 6,
place = {United States},
year = 2016,
month = 8
}

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