Enhancement of hopping conductivity by spontaneous fractal ordering of low-energy sites
- West Chester Univ., West Chester, PA (United States)
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Variable-range hopping conductivity has long been understood in terms of a canonical prescription for relating the single-particle density of states to the temperature-dependent conductivity. Here we demonstrate that this prescription breaks down in situations where a large and long-ranged random potential develops. In particular, we examine a canonical model of a completely compensated semiconductor, and we show that at low temperatures hopping proceeds along self-organized, low-dimensional subspaces having fractal dimension d = 2. We derive and study numerically the spatial structure of these subspaces, as well as the conductivity and density of states that result from them. One of our prominent findings is that fractal ordering of low energy sites greatly enhances the hopping conductivity and allows Efros-Shklovskii type conductivity to persist up to unexpectedly high temperatures.
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States). Center for Excitonics (CE); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0001088
- OSTI ID:
- 1388200
- Alternate ID(s):
- OSTI ID: 1310839
- Journal Information:
- Physical Review B, Vol. 94, Issue 8; Related Information: CE partners with Massachusetts Institute of Technology (lead); Brookhaven National Laboratory; Harvard University; ISSN 2469-9950
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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