Polarization-dependent exciton linewidth in semiconductor quantum wells: A consequence of bosonic nature of excitons
Journal Article
·
· Physical Review B
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- DE5 FG02-02ER15346
- OSTI ID:
- 1310838
- Journal Information:
- Physical Review B, Journal Name: Physical Review B Vol. 94 Journal Issue: 8; ISSN 2469-9950
- Publisher:
- American Physical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 8 works
Citation information provided by
Web of Science
Web of Science
Similar Records
Quantifying spectral diffusion by the direct measurement of the correlation function for excitons in semiconductor quantum wells
Localization dynamics of excitons in disordered semiconductor quantum wells
Doping dependent blue shift and linewidth broadening of intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells
Journal Article
·
Mon Jun 06 00:00:00 EDT 2016
· Journal of the Optical Society of America B
·
OSTI ID:1310838
+2 more
Localization dynamics of excitons in disordered semiconductor quantum wells
Journal Article
·
Fri Jun 23 00:00:00 EDT 2017
· Physical Review. B
·
OSTI ID:1310838
+3 more
Doping dependent blue shift and linewidth broadening of intersubband absorption in non-polar m-plane AlGaN/GaN multiple quantum wells
Journal Article
·
Mon Sep 14 00:00:00 EDT 2015
· Applied Physics Letters
·
OSTI ID:1310838