skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Polarization-dependent exciton linewidth in semiconductor quantum wells: A consequence of bosonic nature of excitons

Authors:
; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1310838
Grant/Contract Number:
DE5 FG02-02ER15346
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 94; Journal Issue: 8; Related Information: CHORUS Timestamp: 2016-08-29 18:10:20; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Singh, Rohan, Suzuki, Takeshi, Autry, Travis M., Moody, Galan, Siemens, Mark E., and Cundiff, Steven T. Polarization-dependent exciton linewidth in semiconductor quantum wells: A consequence of bosonic nature of excitons. United States: N. p., 2016. Web. doi:10.1103/PhysRevB.94.081304.
Singh, Rohan, Suzuki, Takeshi, Autry, Travis M., Moody, Galan, Siemens, Mark E., & Cundiff, Steven T. Polarization-dependent exciton linewidth in semiconductor quantum wells: A consequence of bosonic nature of excitons. United States. doi:10.1103/PhysRevB.94.081304.
Singh, Rohan, Suzuki, Takeshi, Autry, Travis M., Moody, Galan, Siemens, Mark E., and Cundiff, Steven T. Mon . "Polarization-dependent exciton linewidth in semiconductor quantum wells: A consequence of bosonic nature of excitons". United States. doi:10.1103/PhysRevB.94.081304.
@article{osti_1310838,
title = {Polarization-dependent exciton linewidth in semiconductor quantum wells: A consequence of bosonic nature of excitons},
author = {Singh, Rohan and Suzuki, Takeshi and Autry, Travis M. and Moody, Galan and Siemens, Mark E. and Cundiff, Steven T.},
abstractNote = {},
doi = {10.1103/PhysRevB.94.081304},
journal = {Physical Review B},
number = 8,
volume = 94,
place = {United States},
year = {Mon Aug 29 00:00:00 EDT 2016},
month = {Mon Aug 29 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.94.081304

Citation Metrics:
Cited by: 1work
Citation information provided by
Web of Science

Save / Share:
  • Cited by 14
  • A variational calculation of the ground-state energy of neutral excitons and of positively and negatively charged excitons (trions) confined in a single-quantum well is presented. We study the dependence of the correlation energy and of the binding energy on the well width and on the hole mass. The conditional probability distribution for positively and negatively charged excitons is obtained, providing information on the correlation and the charge distribution in the system. A comparison is made with available experimental data on trion binding energies in GaAs-, ZnSe-, and CdTe-based quantum well structures, which indicates that trions become localized with decreasing quantummore » well width. (c) 2000 The American Physical Society.« less
  • We have systematically investigated the photoluminescence (PL) dynamics of free excitons in GaAs/Al{sub 0.3}Ga{sub 0.7}As single quantum wells, focusing on the energy relaxation process due to exciton–acoustic-phonon scattering under non-resonant and weak excitation conditions as a function of GaAs-layer thickness from 3.6 to 12.0 nm and temperature from 30 to 50 K. The free exciton characteristics were confirmed by observation that the PL decay time has a linear dependence with temperature. We found that the free exciton PL rise rate, which is the reciprocal of the rise time, is inversely linear with the GaAs-layer thickness and linear with temperature. This is consistentmore » with a reported theoretical study of the exciton–acoustic-phonon scattering rate in the energy relaxation process in quantum wells. Consequently, it is conclusively verified that the PL rise rate is dominated by the exciton–acoustic-phonon scattering rate. In addition, from quantitative analysis of the GaAs-layer thickness and temperature dependences, we suggest that the PL rise rate reflects the number of exciton–acoustic-phonon scattering events.« less
  • Magnetic semiconductors offer a unique possibility for strongly tuning the intrinsic alloy disorder potential with applied magnetic field. We report the direct observation of a series of step-like reductions in the magnetic alloy disorder potential in single ZnSe/Zn(Cd,Mn)Se quantum wells between O and 60 Tesla. This disorder, measured through the linewidth of low temperature photoluminescence spectra drops abruptly at -19, 36, and 53 Tesla, in concert with observed magnetization steps. Conventional models of alloy disorder (developed for nonmagnetic semiconductors) reproduce the general shape of the data, but markedly underestimate the size of the linewidth reduction.
  • Magnetic semiconductors offer a unique possibility for strongly tuning the intrinsic alloy disorder potential with applied magnetic field. We report the direct observation of a series of steplike reductions in the magnetic alloy disorder potential in single ZnSe/Zn(Cd,&hthinsp;Mn)Se quantum wells between 0 and 60 T. This disorder, measured through the linewidth of low-temperature photoluminescence spectra, drops abruptly at {approximately}19, 36, and 53 T, in concert with observed magnetization steps. Conventional models of alloy disorder (developed for nonmagnetic semiconductors) reproduce the general shape of the data, but markedly underestimate the size of the linewidth reduction. {copyright} {ital 1999} {ital The Americanmore » Physical Society}« less