skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Model development of plasma implanted hydrogenic diffusion and trapping in ion beam damaged tungsten

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1306680
Grant/Contract Number:
FG02-07ER54912; SC0001999
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Nuclear Fusion
Additional Journal Information:
Journal Volume: 56; Journal Issue: 10; Related Information: CHORUS Timestamp: 2016-08-24 03:07:49; Journal ID: ISSN 0029-5515
Publisher:
IOP Publishing
Country of Publication:
IAEA
Language:
English

Citation Formats

Barton, J. L., Wang, Y. Q., Doerner, R. P., and Tynan, G. R.. Model development of plasma implanted hydrogenic diffusion and trapping in ion beam damaged tungsten. IAEA: N. p., 2016. Web. doi:10.1088/0029-5515/56/10/106030.
Barton, J. L., Wang, Y. Q., Doerner, R. P., & Tynan, G. R.. Model development of plasma implanted hydrogenic diffusion and trapping in ion beam damaged tungsten. IAEA. doi:10.1088/0029-5515/56/10/106030.
Barton, J. L., Wang, Y. Q., Doerner, R. P., and Tynan, G. R.. 2016. "Model development of plasma implanted hydrogenic diffusion and trapping in ion beam damaged tungsten". IAEA. doi:10.1088/0029-5515/56/10/106030.
@article{osti_1306680,
title = {Model development of plasma implanted hydrogenic diffusion and trapping in ion beam damaged tungsten},
author = {Barton, J. L. and Wang, Y. Q. and Doerner, R. P. and Tynan, G. R.},
abstractNote = {},
doi = {10.1088/0029-5515/56/10/106030},
journal = {Nuclear Fusion},
number = 10,
volume = 56,
place = {IAEA},
year = 2016,
month = 8
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1088/0029-5515/56/10/106030

Save / Share:
  • The behavior during annealing of heavily doped silicon layers obtained by a high-current-density ion implantation, realized by discharge in BF/sub 3/ atmosphere, is investigated. The annealing is performed by a laser pulse and the surface layers are studied by Rutherford backscattering, SIMS, and conductivity measurements. Comparisons with thermal annealing show the advantage of using laser pulses to restore the original crystallinity.
  • Ion-beam-damaged diamond surfaces subjected to electron irradiation are observed to develop a pronounced negative surface charge. In this study, this effect is shown to be associated with the capture of electrons into traps created by the ion irradiation process. The trapped charge increases with ion dose and incident electron current, and decreases with increasing sample temperature and laser illumination as the traps are depleted of charge. An activation energy for detrapping of about 1.5 eV is deduced from the temperature dependence of the charging.
  • Radiation defects created during implantation appreciably affect the process of redistribution of impurities during subsequent heat treatments. The development of models of diffusion of ion-implanted impurities, taking into account radiation defects, will substantially increase the adequacy of the modeling of doping processes at the design stage and at the stage of testing of modern semiconductor device and IMS technology. The authors propose such a model. For the model, the authors studied the diffusion of boron, gallium, arsenic, and antimony implanted in silicon. Thermal diffusion of these impurities is described under the assumption that the neutral and singly charged equilibrium vacancy-impuritymore » complexes (VIC), formed correspondingly by singly charged and neutral vacancies and impurity atoms at the position of substitution, migrate. It is assumed that the different charge states of the vacancies and vacancy-impurity complexes as well as the impurity atoms, vacancies, and VIC are in local thermodynamic equilibrium.« less
  • Cited by 2