skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model

Abstract

Carrier transport and recombination are modeled for a heterojunction diode containing defect traps. Here, particular attention is given to the role of band-to-trap tunneling and how it is affected by band offsets at the junction. Tunneled states are characterized by numerical solution of the Schrodinger equation, and the interaction with traps is treated assuming capture and emission by the multi-phonon mechanism. It is shown that tunneling can increase carrier recombination at defects by orders magnitude in the presence of large band offsets. This explains why InGaP/GaAs/GaAs Npn HBTs with displacement damage from energetic particle irradiation have higher carrier recombination in the emitter-base depletion region.

Authors:
 [1]; ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Security (NA-70)
OSTI Identifier:
1301989
Alternate Identifier(s):
OSTI ID: 1328481
Report Number(s):
SAND-2016-4695J
Journal ID: ISSN 0021-8979; 640353; TRN: US1700087
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 120; Journal Issue: 13; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; tunneling; heterojunctions; conduction electrons; band models; valence bands

Citation Formats

Wampler, William R., Samuel M. Myers, and Modine, Normand A. Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model. United States: N. p., 2016. Web. doi:10.1063/1.4963873.
Wampler, William R., Samuel M. Myers, & Modine, Normand A. Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model. United States. doi:10.1063/1.4963873.
Wampler, William R., Samuel M. Myers, and Modine, Normand A. Tue . "Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model". United States. doi:10.1063/1.4963873. https://www.osti.gov/servlets/purl/1301989.
@article{osti_1301989,
title = {Recombination by band-to-defect tunneling near semiconductor heterojunctions: A theoretical model},
author = {Wampler, William R. and Samuel M. Myers and Modine, Normand A.},
abstractNote = {Carrier transport and recombination are modeled for a heterojunction diode containing defect traps. Here, particular attention is given to the role of band-to-trap tunneling and how it is affected by band offsets at the junction. Tunneled states are characterized by numerical solution of the Schrodinger equation, and the interaction with traps is treated assuming capture and emission by the multi-phonon mechanism. It is shown that tunneling can increase carrier recombination at defects by orders magnitude in the presence of large band offsets. This explains why InGaP/GaAs/GaAs Npn HBTs with displacement damage from energetic particle irradiation have higher carrier recombination in the emitter-base depletion region.},
doi = {10.1063/1.4963873},
journal = {Journal of Applied Physics},
number = 13,
volume = 120,
place = {United States},
year = {Tue Oct 04 00:00:00 EDT 2016},
month = {Tue Oct 04 00:00:00 EDT 2016}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Save / Share:

Works referenced in this record:

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001

  • Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
  • Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
  • DOI: 10.1063/1.1368156